search
person

1 Answer

 
done_all

No, IGBT is not the current controlled device. IGBT is a voltage controlled device. IGBT have combine qualities of MOSFET and BJT. The high switching speed of MOSFET and low conduction losses of BJT. Also, IGBT which stands for Insulated Gate Bipolar Transistor have high input impedance.

thumb_up_alt 0 like thumb_down_alt 0 dislike

Related questions

Description :

Answer : already answered here is mosfet current controlled device?

Description :

Answer : Thyristor can only be turned on by small gate pulse but it cannot be turn off by using gate hence thyristor is called semi controlled device.

Description :

Answer : No, BJT is a current controlled device .

Description :

Answer : In  BJT  there  is  movement  of   electrons  and  holes   accros  the  junctions  which  is  basicaly  current  flow.

Description :

Answer : MOSFET  are voltage controlled devices.

Description :

Answer : BJT is current controlled device.

Description : A 3 -phase, fully controlled, converter is feeding power into a DC load at a constant current of 150 A, the rms value of the current flowing through each thyristor of the converter is

Answer : A 3 -phase, fully controlled, converter is feeding power into a DC load at a constant current of 150 A, the rms value of the current flowing through each thyristor of the converter is 150/√3

Description : When the firing angle a of a single-phase, fully controlled rectifier feeding constant direct current into a load is 30°, the displacement power factor of the rectifier is

Answer : When the firing angle a of a single-phase, fully controlled rectifier feeding constant direct current into a load is 30°, the displacement power factor of the rectifier is √3/2

Description : A current controlled voltage source is equivalent to :  (A) series voltage feed -back amplifier (B) shunt current feed -back amplifier (C) shunt voltage feed -back amplifier (D) series current feed -back amplifier

Answer : A current controlled voltage source is equivalent to : shunt voltage feed -back amplifier

Description :

Answer : The gravity controlled instrument has crowded scale because current is proportional to sine of deflection angle.

Description : Describe with neat sketch the constructional details of IGBT.

Answer : Construction: Insulated gate bipolar transistor or IGBT, is a solid state devices primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast ... layer and p+ emitter constitute a BJT with a wide base region and hence small current gain.

Description : Draw construction of IGBT.

Answer : construction of IGBT

Description : Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown

Answer : Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown

Description : Compare BJT, MOSFET and IGBT .

Answer : BJT MOSFET IGBT BJT is a current controlled device. MOSFET is a voltage controlled device. IGBT is a voltage controlled device. The input impedance of BJT is low. ... is minority carrier device. MOSFET is majority carrier device. IGBT is minority carrier device.

Description :

Answer : Because it has a higher switching frequency and heat tolerance.

Description : Justify the statements. 1. IGBT uses a vertically oriented structure. 2. IGBT is preferred as a power switch over both power BJT and MOSFET. 3. Punch through IGBT structure are more popular and are widely used.

Answer : 1. IGBT uses vertically oriented structure. IGBT use vertically oriented structure to reduce the resistance and to increase the current flow area. Hence IGBT uses vertically oriented ... DC circuit applications. Hence punch through IGBT structure are more popular and are widely used.

Description : Also, highlight the problem faced during parallel operation.

Answer : Parallel operation of IGBT: Parallel operation of IGBT is done for obtaining high current rating. Paralleling of IGBT reduces conduction losses and thermal stress. IGBT combines the qualities of ... . IGBTs must share losses equally otherwise IGBT may get failure due to thermal differences.

Description :

Answer : IGBT is a bipolar device.

Description :

Answer :  IGBT or Insulated Gate Bi-polar Transistors are typically semiconductor devices aka.  controlled switches,  which find their applications in Power Electronics circuits such as Inverters, and electrical ... ( buy implementing suitable Pulse Width Modulation scheme ) * Lower cost 

Description :

Answer : IGBT is a bipolar device because current is carried by both holes and electrons.

Description :

Answer : ON state losses of IGBT is less as compared to MOSFET and BJT.

Description : State classification of Phase controlled rectifiers.

Answer : Classification of phase controlled rectifiers:

Description : Single-phase mid-point controlled rectifier with RL load

Answer : Single-phase mid-point controlled rectifier with RL load : The circuit configuration of single-phase midpoint controlled rectifier is shown in the figure. During positive half-cycle of ... some part of next positive half-cycle of voltage with reversed polarity can appear across load.

Description : Single-phase Midpoint controlled rectifier with Resistive load

Answer : Single-phase Midpoint controlled rectifier with Resistive load:  1) During positive half cycle of AC supply, a is positive with respect to b , this makes T1 forward biased and T2 is reverse ... voltage reverses the polarity and T2 is turned off. The operation is as shown in waveforms.

Description : Give the operation of single phase full wave bridge controlled converter with RL load with a neat diagram. Also draw its waveform.

Answer : Single phase fully control bridge converter with RL load: 1. During positive half cycle of input voltage, T1 and T2 are forward biased and during negative half cycle, T3 and T4 are forward biased. Therefore, T1-T2 ... cycle till the firing of next pair of SCRs as shown in the waveform.

Description : Draw a neat diagram of 1Ф half wave controlled converter with RL load. Give its operation.

Answer : Single phase fully controlled half wave converter:  The circuit diagram of single-phase half-wave controlled rectifier with RL load and without freewheeling diode is shown in Fig. (a). The SCR T is ... , when again pulse is applied, the SCR is turned on & the above cycle is repeated. 

Description : A 230 V, 50 Hz phase controlled single-phase full-controlled SCR bridge converter draws 15 A constant dc current. If the source inductance is 3 mH, the drop in dc output voltage is (A) 4.5 V (B) 6.75 V (C) 9 V (D) 13.5 V

Answer : A 230 V, 50 Hz phase controlled single-phase full-controlled SCR bridge converter draws 15 A constant dc current. If the source inductance is 3 mH, the drop in dc output voltage is 9 V

Description : The device which allows reverse power flow and withstands highest switch frequency is (A) GTO (B) MOSFET (C) IGBT (D) Inverter grade SCR

Answer : The device which allows reverse power flow and withstands highest switch frequency is MOSFET

Description : Give the applications of IGBT

Answer : 1) AC and DC motor drives 2) SMPS 3) Inverters 4) Choppers 5) Solid-state Relays 6) solid-state Contactors

Description : The number of terminals present in IGBT is A) 2 B) 3 C) 4 D) 5

Answer : The number of terminals present in IGBT is 3

Description :

Answer : Yes IGBT is costlier than BJT and MOSFET.

Description : Application one lamp controlled from two places

Answer : Application one lamp controlled from two places: 1. For Stair case wiring 2. Hospital Wiring ( For operating the lamp in room and nursing station) 3. Bedroom Lighting. 

Description : How are nuclear reactors controlled? Explain two different methods in brief.

Answer : Nuclear reactor is controlled using control rods: Control rods are made up of very high neutron absorbing material like boron, cadmium. By adjusting height of control rods on reactor core ... of nuclear reaction will increase. Whereas by pushing control rod towards the core it will reduce.

Description : The speed of a three-phase induction motor is controlled by variable voltage variable frequency control (i.e. keeping V/f constant). As the frequency is reduced, the slip at maximum torque  (1) Decreases (2) Increases (3) Remains constant (4) None of the above

Answer : The speed of a three-phase induction motor is controlled by variable voltage variable frequency control (i.e. keeping V/f constant). As the frequency is reduced, the slip at maximum torque Increases 

Description : In voltage source converter based HVDC transmission system the active power is controlled by changing (A) phase angle of the converter ac input voltage (B) supply frequency of the converter ac input voltage (C) magnitude of the converter ac input voltage (D) DC voltage at the inverter terminals

Answer : In voltage source converter based HVDC transmission system the active power is controlled by changing phase angle of the converter ac input voltage

Description : For a 15-bus power system with 3 voltage controlled buses, the size of Jacobian matrix is

Answer : For a 15-bus power system with 3 voltage controlled buses, the size of Jacobian matrix is 25 x 25

Description :

Answer : The speed of a locomotive is controlled by gear box.

Description : How many servos can be controlled by Arduino?

Description : Chopper controlled DC motor

Answer : Chopper controlled DC motor

Description : State any four materials used in fabrication of semiconductor device and describe its need.

Answer : For fabrication of semiconductor devices like transistors diode, solar cell etc. we have to make use of following types of materials  1. Substrate: o It is used for deposition of thin ... . o Metal cans and sealed glass containers satisfy the extreme requirements of space and military users.

Description : Linear and non-linear device

Answer : Linear and non-linear device

Description : Why transistor is called as bipolar device.

Answer : BJT is called bipolar device because in BJT current conduction takes place due to majority as well as minority charge carriers that is because of electrons as well as holes.

Description : Which of the following device is used for coupling microwave energy?  A) Resonator B) Waveguide C) Loop D) Antenna

Answer : Which of the following device is used for coupling microwave energy?  A) Resonator B) Waveguide C) Loop D) Antenna 

Description :  Which of the following is a negative-resistance microwave device for oscillator applications? A) IMPATT Diode B) Gunn Diode C) Snap diode D) Schottky Diode 

Answer :  Which of the following is a negative-resistance microwave device for oscillator applications? A) IMPATT Diode B) Gunn Diode C) Snap diode D) Schottky Diode 

Description : A snubber circuit is connected to the power semiconductor device to reduce the (A) turn-on time (B) turn-off time (C) electrical stresses (D) thermal resistance

Answer : A snubber circuit is connected to the power semiconductor device to reduce the electrical stresses

Description :

Answer : Wagner earthing device is used to eliminate errors due to electrostatic coupling.

Description :

Answer : Basically a potentiometer is a device for comparing two voltages.

Description :

Answer : A damping device prevents the oscillation of the moving system and enables the latter to reach its final position quickly.

Description :

Answer : A switchgear is device used for switching, controlling and protecting the electrical circuit and equipment.

← Prev Question Next Question →
editAsk a Question
...