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IGBT is a bipolar device.
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Description :

Answer : IGBT is a bipolar device because current is carried by both holes and electrons.

Description : Explain DC coupled drive circuit with unipolar output.

Answer : DC coupled drive circuit with unipolar output: The figure shows the circuit and waveforms

Description : Compare between BJT and FET on the basis of (i) Biolar/Unipolar (ii) Tharmal Runaway (iii) Noise (iv) Applications

Answer : Parameter BJT FET Bipolar/Unipolar It is bipolar device i.e. current in this device is carried by electrons and holes. It is unipolar device i.e. current ... in oscilloscopes, electronic voltmeters and other measuring and testing equipment because of their high input impedance.

Description : Why transistor is called as bipolar device.

Answer : BJT is called bipolar device because in BJT current conduction takes place due to majority as well as minority charge carriers that is because of electrons as well as holes.

Description : Describe with neat sketch the constructional details of IGBT.

Answer : Construction: Insulated gate bipolar transistor or IGBT, is a solid state devices primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast ... layer and p+ emitter constitute a BJT with a wide base region and hence small current gain.

Description : Draw construction of IGBT.

Answer : construction of IGBT

Description : Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown

Answer : Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown

Description : Compare BJT, MOSFET and IGBT .

Answer : BJT MOSFET IGBT BJT is a current controlled device. MOSFET is a voltage controlled device. IGBT is a voltage controlled device. The input impedance of BJT is low. ... is minority carrier device. MOSFET is majority carrier device. IGBT is minority carrier device.

Description :

Answer : Because it has a higher switching frequency and heat tolerance.

Description : Justify the statements. 1. IGBT uses a vertically oriented structure. 2. IGBT is preferred as a power switch over both power BJT and MOSFET. 3. Punch through IGBT structure are more popular and are widely used.

Answer : 1. IGBT uses vertically oriented structure. IGBT use vertically oriented structure to reduce the resistance and to increase the current flow area. Hence IGBT uses vertically oriented ... DC circuit applications. Hence punch through IGBT structure are more popular and are widely used.

Description : Also, highlight the problem faced during parallel operation.

Answer : Parallel operation of IGBT: Parallel operation of IGBT is done for obtaining high current rating. Paralleling of IGBT reduces conduction losses and thermal stress. IGBT combines the qualities of ... . IGBTs must share losses equally otherwise IGBT may get failure due to thermal differences.

Description :

Answer : No, IGBT is not the current controlled device. IGBT is a voltage controlled device. IGBT have combine qualities of MOSFET and BJT. The high switching speed of MOSFET and low conduction losses of BJT. Also, IGBT which stands for Insulated Gate Bipolar Transistor have high input impedance.

Description :

Answer :  IGBT or Insulated Gate Bi-polar Transistors are typically semiconductor devices aka.  controlled switches,  which find their applications in Power Electronics circuits such as Inverters, and electrical ... ( buy implementing suitable Pulse Width Modulation scheme ) * Lower cost 

Description :

Answer : ON state losses of IGBT is less as compared to MOSFET and BJT.

Description : Give the applications of IGBT

Answer : 1) AC and DC motor drives 2) SMPS 3) Inverters 4) Choppers 5) Solid-state Relays 6) solid-state Contactors

Description : The number of terminals present in IGBT is A) 2 B) 3 C) 4 D) 5

Answer : The number of terminals present in IGBT is 3

Description :

Answer : Yes IGBT is costlier than BJT and MOSFET.

Description : Is BJT unipolar or bipolar Why?

Answer : Bipolar Junction Transistor (BJT) is a bipolar device because current is carried by both holes and electrons hence it is called bipolar.

Description : A digital board has a unipolar square clock of 250MHz. If the clock on the board at all places should have all the harmonic components which have more than 10 % of DC value, the board has to be designed for at least —  A) 250MHz B) 750MHz C) 1250 MHz D) 2500 MHz

Description : What are the three elements of a bipolar transistor? Are they the: w) grid, plate, cathode x) suppressor, deflector, target y) energizer, controller, terminus z) emitter, base, collector

Answer : ANSWER: Z -- EMITTER, BASE, COLLECTOR

Description : State reason BJT is called as bipolar junction transistor.

Answer : BJT is called bipolar junction transistor because in BJT current conduction takes place due to majority as well as minority charge carriers.

Description : What is the correct sequence of the following step in the fabrication of a monolithic, bipolar junction transistor? 1. Emitter diffusion 2. Base diffusion 3. Buried layer formation 4. Epi–layer formation Select the correct answer using the codes given below (1) 3, 4, 1, 2 (2) 4, 3, 1, 2 (3) 3, 4, 2, 1 (4) 4, 3, 2, 1 

Answer : What is the correct sequence of the following step in the fabrication of a monolithic, bipolar junction transistor? 1. Emitter diffusion 2. Base diffusion 3. Buried layer formation 4. Epi-layer formation Select the correct answer using the codes ... ) 4, 3, 1, 2 (3) 3, 4, 2, 1 (4) 4, 3, 2, 1 

Description : A bipolar junction transistor (BJT) is used as a power control switch by biasing it in the cut-off region (OFF state) or in the saturation region (ON state). In the ON state, for the BJT  (A) both the base-emitter and base-collector junctions are reverse biased (B) the base-emitter junction is reverse biased, and the base-collector junction is forward biased (C) the base-emitter junction is forward biased, and the base-collector junction is reverse biased (D) both the base-emitter and base-collector junctions are forward biased

Answer : A BJT is as a power control switch by biasing it in cut-off region (OFF state) or in the saturation region (ON state). In  ON state, for BJT both the base-emitter and base- collector junctions are forward biased

Description :

For a 1.8o, 2-phase bipolar stepper motor, the stepping rate is 100 steps/second. The rotational speed of the motor in rpm is 

(A) 15 (B) 30 (C) 60 (D) 90

Answer : For a 1.8o, 2-phase bipolar stepper motor, the stepping rate is 100 steps/second. The rotational speed of the motor in rpm is 30 

Description : In a bipolar transistor when in saturation, the dc current gain is (a) less than (3 (b) greater than (3 (c) equal to 13 (d) zero

Description : Explain three phase half wave controller or three phase unidirectional controller.

Answer : Three phase half wave controller or unidirectional controller:

Description : Which is the positive terminal anode or cathode?

Answer : Anode is positive terminal and cathode is negative terminal.

Description : Is the anode or cathode longer in LED ?

Answer : In LED anode terminal is longer and cathode terminal is smaller.

Description : IGBT uses IGBT uses

Answer : Applications of IGBT: 1. The insulated gate bipolar transistor (IGBT) is used Ac and DC motor drivers. 2. The IGBT is used in unregulated power supply (UPS) system. 3. The IGBT is used to ... an isolated-gate FET for the control input and a bipolar power transistor as a switch in a single device.

Description : IGBT V-I characteristics

Description : IGBT working principle

Description : IGBT Construction

Description : What is IGBT (Insulated Gate Bipolar Transistor) ?

Answer : As compare to BJT and MOSFET, IGBT have very low on state voltage drop. IGBT require low driving power. IGBT have wide SOA (Safe Operating Area). The current conduction capability of ... very useful for improving dynamic performance and efficiency. IGBT also very good in reducing audible noise.

Description : For IGBT, which of the following statement is true?  (a) Switching speed of IGBT is more than bipolar transistor (b) IGBT is a current-controlled device (c) On-state collector-emitter voltage is less than that of bipolar junction transistor (d) It combines voltage control features of MOSFET gate and high power capability of bipolar transistor

Answer : For IGBT, which of the following statement is true?  (a) Switching speed of IGBT is more than bipolar transistor (b) IGBT is a current-controlled device (c) On-state collector- ... transistor (d) It combines voltage control features of MOSFET gate and high power capability of bipolar transistor

Description : The requirement of the gate drive circuits for power MOSFET and IGBT is (a) high source capability (b) high sink capability (c) both (a) and (b) (d) high voltage capability

Description : An IGBT has three terminals called   (a) Collector, Emitter and Base (b) Drain, Source and Base (c) Drain, Source and Gate (d) Collector, Emitter and Gate  

Description : Consider the following statements in respect of important features of IGBT.  P. It has high input impedance gate as that of a MOSFET  Q. It has low ON state voltage drop as that of a BJT  R. Turn-off time is significantly less than MOSFET  Which of these statements are correct?  A) P and Q B) P and R C) Q and R D) P, Q and R

Description : The switching time (in µS) of IGBT is in the range of  A) 20 B) 10 C) 2 D) 0.5

Description :

Answer : IGBT is used as High frequency switching device.

Description :

Answer : Igbt alone cant convert dc to ac. igbt half bridge or full bridge or three phase topology could be used to convert dc to ac. also igbt gates should be driven by microcontroller or pwm/spwm gate driving signals ... e4(-) and g4 c2e1 and c4e3 pins are AC output pins. its name is igbt inverter.

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