Ask or Answer

🏠 Home🏷️ Tags❔ Ask a Question✔️ Answer a QuestionUsers
78 views

Please log in or register to answer this question.

1 Answer

Answer :

 IGBT or Insulated Gate Bi-polar Transistors are typically semiconductor devices aka.  controlled switches,  which find their applications in Power Electronics circuits such as Inverters, and electrical drives.

IGBTs are used for higher power ratings where as Power MOSFETs are used for lower power ratings in an electrical drive circuit.

The use of IGBTs in a VFD (Variable Frequency Drive) offers the following advantages :

* High speed switching 

* Low power loss hence highly efficient 

* Self commuting ( Does not require turn off circuits)

* Simple and easy to control ( buy implementing suitable Pulse Width Modulation scheme )

* Lower cost 

Like 0 like

Related Questions

121 views

Last Answer : ON state losses of IGBT is less as compared to MOSFET and BJT.

1 answer
122 views

Last Answer : Because it has a higher switching frequency and heat tolerance.

1 answer
120 views

Last Answer : IGBT is a bipolar device because current is carried by both holes and electrons.

1 answer
88 views

Description : Advantages of Variable Frequency Drive (VFD)

Last Answer : Advantages of Variable Frequency Drive (VFD)

2 answers
164 views

Description : Describe with neat sketch the constructional details of IGBT.

Last Answer : Construction: Insulated gate bipolar transistor or IGBT, is a solid state devices primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast ... layer and p+ emitter constitute a BJT with a wide base region and hence small current gain.

1 answer
315 views

Description : Draw construction of IGBT.

Last Answer : construction of IGBT

1 answer
3,063 views

Description : Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown

Last Answer : Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown

1 answer
397 views

Description : Compare BJT, MOSFET and IGBT .

Last Answer : BJT MOSFET IGBT BJT is a current controlled device. MOSFET is a voltage controlled device. IGBT is a voltage controlled device. The input impedance of BJT is low. ... is minority carrier device. MOSFET is majority carrier device. IGBT is minority carrier device.

1 answer
2,930 views

Description : Justify the statements. 1. IGBT uses a vertically oriented structure. 2. IGBT is preferred as a power switch over both power BJT and MOSFET. 3. Punch through IGBT structure are more popular and are widely used.

Last Answer : 1. IGBT uses vertically oriented structure. IGBT use vertically oriented structure to reduce the resistance and to increase the current flow area. Hence IGBT uses vertically oriented ... DC circuit applications. Hence punch through IGBT structure are more popular and are widely used.

1 answer
205 views

Description : Also, highlight the problem faced during parallel operation.

Last Answer : Parallel operation of IGBT: Parallel operation of IGBT is done for obtaining high current rating. Paralleling of IGBT reduces conduction losses and thermal stress. IGBT combines the qualities of ... . IGBTs must share losses equally otherwise IGBT may get failure due to thermal differences.

1 answer
Show MoreAsk QuestionNext Page →