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IGBT is a bipolar device because current is carried by both holes and electrons.
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Description :

Answer : IGBT is a bipolar device.

Description : Why transistor is called as bipolar device.

Answer : BJT is called bipolar device because in BJT current conduction takes place due to majority as well as minority charge carriers that is because of electrons as well as holes.

Description :

Answer : Because it has a higher switching frequency and heat tolerance.

Description :

Answer :  IGBT or Insulated Gate Bi-polar Transistors are typically semiconductor devices aka.  controlled switches,  which find their applications in Power Electronics circuits such as Inverters, and electrical ... ( buy implementing suitable Pulse Width Modulation scheme ) * Lower cost 

Description :

Answer : ON state losses of IGBT is less as compared to MOSFET and BJT.

Description : Describe with neat sketch the constructional details of IGBT.

Answer : Construction: Insulated gate bipolar transistor or IGBT, is a solid state devices primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast ... layer and p+ emitter constitute a BJT with a wide base region and hence small current gain.

Description : Draw construction of IGBT.

Answer : construction of IGBT

Description : Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown

Answer : Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown

Description : Compare BJT, MOSFET and IGBT .

Answer : BJT MOSFET IGBT BJT is a current controlled device. MOSFET is a voltage controlled device. IGBT is a voltage controlled device. The input impedance of BJT is low. ... is minority carrier device. MOSFET is majority carrier device. IGBT is minority carrier device.

Description : Justify the statements. 1. IGBT uses a vertically oriented structure. 2. IGBT is preferred as a power switch over both power BJT and MOSFET. 3. Punch through IGBT structure are more popular and are widely used.

Answer : 1. IGBT uses vertically oriented structure. IGBT use vertically oriented structure to reduce the resistance and to increase the current flow area. Hence IGBT uses vertically oriented ... DC circuit applications. Hence punch through IGBT structure are more popular and are widely used.

Description : Also, highlight the problem faced during parallel operation.

Answer : Parallel operation of IGBT: Parallel operation of IGBT is done for obtaining high current rating. Paralleling of IGBT reduces conduction losses and thermal stress. IGBT combines the qualities of ... . IGBTs must share losses equally otherwise IGBT may get failure due to thermal differences.

Description :

Answer : No, IGBT is not the current controlled device. IGBT is a voltage controlled device. IGBT have combine qualities of MOSFET and BJT. The high switching speed of MOSFET and low conduction losses of BJT. Also, IGBT which stands for Insulated Gate Bipolar Transistor have high input impedance.

Description : Give the applications of IGBT

Answer : 1) AC and DC motor drives 2) SMPS 3) Inverters 4) Choppers 5) Solid-state Relays 6) solid-state Contactors

Description : The number of terminals present in IGBT is A) 2 B) 3 C) 4 D) 5

Answer : The number of terminals present in IGBT is 3

Description :

Answer : Yes IGBT is costlier than BJT and MOSFET.

Description : Is BJT unipolar or bipolar Why?

Answer : Bipolar Junction Transistor (BJT) is a bipolar device because current is carried by both holes and electrons hence it is called bipolar.

Description : What are the three elements of a bipolar transistor? Are they the: w) grid, plate, cathode x) suppressor, deflector, target y) energizer, controller, terminus z) emitter, base, collector

Answer : ANSWER: Z -- EMITTER, BASE, COLLECTOR

Description : State reason BJT is called as bipolar junction transistor.

Answer : BJT is called bipolar junction transistor because in BJT current conduction takes place due to majority as well as minority charge carriers.

Description : What is the correct sequence of the following step in the fabrication of a monolithic, bipolar junction transistor? 1. Emitter diffusion 2. Base diffusion 3. Buried layer formation 4. Epi–layer formation Select the correct answer using the codes given below (1) 3, 4, 1, 2 (2) 4, 3, 1, 2 (3) 3, 4, 2, 1 (4) 4, 3, 2, 1 

Answer : What is the correct sequence of the following step in the fabrication of a monolithic, bipolar junction transistor? 1. Emitter diffusion 2. Base diffusion 3. Buried layer formation 4. Epi-layer formation Select the correct answer using the codes ... ) 4, 3, 1, 2 (3) 3, 4, 2, 1 (4) 4, 3, 2, 1 

Description : A bipolar junction transistor (BJT) is used as a power control switch by biasing it in the cut-off region (OFF state) or in the saturation region (ON state). In the ON state, for the BJT  (A) both the base-emitter and base-collector junctions are reverse biased (B) the base-emitter junction is reverse biased, and the base-collector junction is forward biased (C) the base-emitter junction is forward biased, and the base-collector junction is reverse biased (D) both the base-emitter and base-collector junctions are forward biased

Answer : A BJT is as a power control switch by biasing it in cut-off region (OFF state) or in the saturation region (ON state). In  ON state, for BJT both the base-emitter and base- collector junctions are forward biased

Description :

For a 1.8o, 2-phase bipolar stepper motor, the stepping rate is 100 steps/second. The rotational speed of the motor in rpm is 

(A) 15 (B) 30 (C) 60 (D) 90

Answer : For a 1.8o, 2-phase bipolar stepper motor, the stepping rate is 100 steps/second. The rotational speed of the motor in rpm is 30 

Description : In a bipolar transistor when in saturation, the dc current gain is (a) less than (3 (b) greater than (3 (c) equal to 13 (d) zero

Description :

Why thyristor are not preferred for inverter?

Description :

Why SCR is called as thyristor?

Description : Why is pulse train gating preferred over pulse gating? Explain with relevant circuit and waveforms, the pulse train gating of SCRs.

Description : Why the power factor of semiconverter is better than full converter?

Answer : Power factor of semiconverter is better than full converter

Description : parallel operation of MOSFET can be done more easily as compared to thyristor. why?

Answer : Parallel operation of MOSFET can be done more easily as compared to thyristor because the resistance of MOSFET is increases with increase in temperature. MOSFET have the positive temperature coefficient. In ... the parallel operation of MOSFET can be done more easily as compared to the thyristor.

Description : Explain the series and parallel operation of MOSFET. Which is suitable and why?

Answer : Series operation of MOSFET: To increase voltage handling capability MOSFETs are connected in series. When the MOSFETs are connected in series each MOSFET should turn on and turn off ... on and turn off time and transconductance. Each MOSFET should share current equally.  

Description :

Answer : PN junction of zener diode is heavily doped than ordinary diode. For the occurrence of Zener effect the zener diode is heavily doped. If the zener diode is not heavily doped then Zener effect ... breakdown voltage is sharp. If the diode is lightly doped the diode will have higher breakdown voltage.

Description :

Answer : Rectifier is use in power supply to convert Alternating current (AC) to Direct Current (DC) .

Description :

Answer : already answered here is mosfet current controlled device?

Description :

Answer : MOSFET provides better efficiency at high frequency and its high speed switching losses are less hence MOSFET is used for high frequency.

Description : IGBT uses IGBT uses

Answer : Applications of IGBT: 1. The insulated gate bipolar transistor (IGBT) is used Ac and DC motor drivers. 2. The IGBT is used in unregulated power supply (UPS) system. 3. The IGBT is used to ... an isolated-gate FET for the control input and a bipolar power transistor as a switch in a single device.

Description : IGBT V-I characteristics

Description : IGBT working principle

Description : IGBT Construction

Description : What is IGBT (Insulated Gate Bipolar Transistor) ?

Answer : As compare to BJT and MOSFET, IGBT have very low on state voltage drop. IGBT require low driving power. IGBT have wide SOA (Safe Operating Area). The current conduction capability of ... very useful for improving dynamic performance and efficiency. IGBT also very good in reducing audible noise.

Description : For IGBT, which of the following statement is true?  (a) Switching speed of IGBT is more than bipolar transistor (b) IGBT is a current-controlled device (c) On-state collector-emitter voltage is less than that of bipolar junction transistor (d) It combines voltage control features of MOSFET gate and high power capability of bipolar transistor

Answer : For IGBT, which of the following statement is true?  (a) Switching speed of IGBT is more than bipolar transistor (b) IGBT is a current-controlled device (c) On-state collector- ... transistor (d) It combines voltage control features of MOSFET gate and high power capability of bipolar transistor

Description : The requirement of the gate drive circuits for power MOSFET and IGBT is (a) high source capability (b) high sink capability (c) both (a) and (b) (d) high voltage capability

Description : An IGBT has three terminals called   (a) Collector, Emitter and Base (b) Drain, Source and Base (c) Drain, Source and Gate (d) Collector, Emitter and Gate  

Description : Consider the following statements in respect of important features of IGBT.  P. It has high input impedance gate as that of a MOSFET  Q. It has low ON state voltage drop as that of a BJT  R. Turn-off time is significantly less than MOSFET  Which of these statements are correct?  A) P and Q B) P and R C) Q and R D) P, Q and R

Description : The switching time (in µS) of IGBT is in the range of  A) 20 B) 10 C) 2 D) 0.5

Description :

Answer : IGBT is used as High frequency switching device.

Description :

Answer : Igbt alone cant convert dc to ac. igbt half bridge or full bridge or three phase topology could be used to convert dc to ac. also igbt gates should be driven by microcontroller or pwm/spwm gate driving signals ... e4(-) and g4 c2e1 and c4e3 pins are AC output pins. its name is igbt inverter.

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