why igbt is used instead of bjt and mosfet?

Question

asked Sep 13, 2017 by anonymous

109 views

Please log in or register to answer this question.

1 Answer

← Prev Question Next Question →

Related questions

asked Sep 15, 2017 by anonymous

why IGBT is preferred as a power switch over both power BJT and MOSFET?

Last answer: Because it has a higher switching frequency and heat tolerance.

1 like 0 dislike

110 views 1 answer

asked Apr 28, 2018 by anonymous

Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ?

Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown

Last answer: Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown

0 like 0 dislike

3.0k views 1 answer

asked Nov 10, 2017 by anonymous

Compare BJT, MOSFET and IGBT .

Last answer: BJT MOSFET IGBT BJT is a current controlled device. MOSFET is a voltage controlled device. IGBT is a voltage controlled device. The input impedance of BJT is low. ... is minority carrier device. MOSFET is majority carrier device. IGBT is minority carrier device.

1 like 0 dislike

352 views 1 answer

asked Sep 29, 2017 by anonymous

is IGBT costlier than BJT and MOSFET?

Last answer: Yes IGBT is costlier than BJT and MOSFET.

0 like 0 dislike

2.6k views 1 answer

asked Feb 6, 2018 by anonymous

Explain the formation of parasitic BJT and parasitic diode in Power MOSFET.

Explain the formation of parasitic BJT and parasitic diode in Power MOSFET. Can parasitic diode be used in same power electronics applications?

Last answer: Parasitic Diode: The parasitic diode is in between drain and source. The MOSFET structure itself contains parasitic diode or body drain diode. This parasitic diode allows the reverse flow of current when the ... of MOSFET as a BJT collector. Parasitic BJT operates in the cut-off region.

1 like 0 dislike

2.4k views 1 answer

asked Feb 3, 2018 by anonymous

Operating frequency of power MOSFET is higher than that of power BJT. Justify the statement.

Last answer: Power MOSFET have high turning on and turning off capability high switching speed of MOSFET is due to the high rate of change of drain voltage. The switching losses of power MOSFET ... lower frequency. Hence, operating frequency of power MOSFET is higher than that of power BJT.

2 like 0 dislike

700 views 1 answer

asked Mar 19, 2018 by anonymous

Is the input impedance of MOSFET more than BJT and FET?

Last answer: Yes, the input impedance of MOSFET more than BJT and FET.

0 like 0 dislike

297 views 1 answer

asked Sep 13, 2017 by anonymous

why igbt is used in vfd?

Last answer: IGBT or Insulated Gate Bi-polar Transistors are typically semiconductor devices aka. controlled switches, which find their applications in Power Electronics circuits such as Inverters, and electrical ... ( buy implementing suitable Pulse Width Modulation scheme ) * Lower cost

0 like 0 dislike

72 views 1 answer

asked Sep 13, 2017 by anonymous

why igbt is bipolar?

Last answer: IGBT is a bipolar device because current is carried by both holes and electrons.

1 like 0 dislike

114 views 1 answer

asked Sep 10, 2017 by anonymous

why mosfet is used for high frequency?

Last answer: MOSFET provides better efficiency at high frequency and its high speed switching losses are less hence MOSFET is used for high frequency.

1 like 0 dislike

98 views 1 answer

asked Sep 15, 2017 by anonymous

Explain the series and parallel operation of MOSFET. Which is suitable and why ?

Explain the series and parallel operation of MOSFET. Which is suitable and why?

Last answer: Series operation of MOSFET: To increase voltage handling capability MOSFETs are connected in series. When the MOSFETs are connected in series each MOSFET should turn on and turn off ... on and turn off time and transconductance. Each MOSFET should share current equally.

1 like 0 dislike

440 views 1 answer

asked Sep 10, 2017 by anonymous

why mosfet is voltage controlled device?

Last answer: already answered here is mosfet current controlled device?

1 like 0 dislike

126 views 1 answer

asked Dec 7, 2017 by anonymous

parallel operation of mosfet can be done more easily as compared to thyristor. why?

parallel operation of MOSFET can be done more easily as compared to thyristor. why?

Last answer: Parallel operation of MOSFET can be done more easily as compared to thyristor because the resistance of MOSFET is increases with increase in temperature. MOSFET have the positive temperature coefficient. In ... the parallel operation of MOSFET can be done more easily as compared to the thyristor.

2 like 0 dislike

264 views 1 answer

asked Sep 13, 2017 by anonymous

is igbt current controlled device ?

Last answer: No, IGBT is not the current controlled device. IGBT is a voltage controlled device. IGBT have combine qualities of MOSFET and BJT. The high switching speed of MOSFET and low conduction losses of BJT. Also, IGBT which stands for Insulated Gate Bipolar Transistor have high input impedance.

1 like 0 dislike

132 views 1 answer

asked Sep 13, 2017 by anonymous

igbt is unipolar or bipolar?

Last answer: IGBT is a bipolar device.

1 like 0 dislike

245 views 1 answer

asked May 21, 2020 by anonymous

Describe with neat sketch the constructional details of IGBT.

Last answer: Construction: Insulated gate bipolar transistor or IGBT, is a solid state devices primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast ... layer and p+ emitter constitute a BJT with a wide base region and hence small current gain.

0 like 0 dislike

96 views 1 answer

asked Oct 13, 2019 by anonymous

Draw construction of IGBT.

Last answer: construction of IGBT

0 like 0 dislike

267 views 1 answer

asked Sep 15, 2017 by anonymous

explain the parallel operation of IGBT?

Also, highlight the problem faced during parallel operation.

Last answer: Parallel operation of IGBT: Parallel operation of IGBT is done for obtaining high current rating. Paralleling of IGBT reduces conduction losses and thermal stress. IGBT combines the qualities of ... . IGBTs must share losses equally otherwise IGBT may get failure due to thermal differences.

1 like 0 dislike

194 views 1 answer

asked Sep 15, 2017 by anonymous

Justify the statement. IGBT uses a vertically oriented structure.

Justify the statements. 1. IGBT uses a vertically oriented structure. 2. IGBT is preferred as a power switch over both power BJT and MOSFET. 3. Punch through IGBT structure are more popular and are widely used.

Last answer: 1. IGBT uses vertically oriented structure. IGBT use vertically oriented structure to reduce the resistance and to increase the current flow area. Hence IGBT uses vertically oriented ... DC circuit applications. Hence punch through IGBT structure are more popular and are widely used.

1 like 0 dislike

2.9k views 1 answer

asked Sep 22, 2017 by anonymous

Why MOSFET is used for low power applications?

Last answer: MOSFET have high current losses due to High on state resistance. Hence MOSFET is used for low power applications.

0 like 0 dislike

78 views 1 answer

asked Feb 20, 2018 by anonymous

What is the difference between beta and forced beta for BJT?

0 like 0 dislike

519 views 0 answers

asked Jul 25, 2019 by anonymous

Describe with neat sketch the construction and working principle of MOSFET.

Last answer: Construction and working principle of MOSFET: A) Depletion type MOSFET: Construction: The N-channel depletion type MOSFET is formed on P-type silicon substrate with two heavily ... accumulation of electrons and hence more current. Thus the MOSFET is a gate voltage controlled device.

0 like 0 dislike

2.6k views 1 answer

asked Feb 19, 2018 by anonymous

Explain MOSFET gate drive circuit and totem pole configuration.

Last answer: MOSFET gate drive circuit: The turning on and turning off of MOSFET can be controlled from gate to source voltage signal. If the gate to source voltage of MOSFET exceeds threshold ... this configuration, the two switches (transistors) are used in totem pole arrangement with a comparator.

0 like 0 dislike

269 views 1 answer

asked Nov 14, 2017 by anonymous

Explain difference between enhancement MOSFET and depletion type MOSFET.

Last answer: In enhancement MOSFET channel is not initially exists but in depletion MOSFET channel is already exists. In case of depletion MOSFET if the voltage is applied between drain and source the drain current will flow ... a channel. depletion MOSFET & enhancement MOSFET

0 like 0 dislike

346 views 1 answer

asked Sep 10, 2017 by anonymous

why bjt is called current controlled device?

Last answer: In BJT there is movement of electrons and holes accros the junctions which is basicaly current flow.

1 like 0 dislike

299 views 2 answers

asked Sep 22, 2017 by anonymous

Why paralleling of mosfet is easier?

Last answer: Because of positive temperature coefficient of mosfet the paralleling of mosfet is easier.

0 like 0 dislike

53 views 1 answer

asked Mar 19, 2018 by anonymous

Why Mosfet is called Mosfet?

0 like 0 dislike

50 views 0 answers

asked Feb 19, 2018 by anonymous

Explain open emitter BJT drive circuit.

Last answer: open emitter BJT drive circuit:

0 like 0 dislike

230 views 1 answer

asked Sep 15, 2017 by anonymous

Explain the on state losses in power BJT.

Last answer: On state losses in power BJT: Transistor have four types of losses one is turn on state losses second is turn off state losses third is turn on switching losses and fourth is turn ... ON = VCE sat x IC With increasing collector current collector to emitter saturation voltage increases.

2 like 0 dislike

240 views 1 answer

asked Apr 28, 2018 by anonymous

The threshold voltage of an n- channel enhancement mode MOSFET is 0.5V when the device is biased at

The threshold voltage of an n- channel enhancement mode MOSFET is 0.5V when the device is biased at a gate voltage of 3V. Pinch off would be occurs at a drain voltage of (A) 1.5V (B) 2.5V (C) 3.5V (D) 4.5V

Last answer: The threshold voltage of an n- channel enhancement mode MOSFET is 0.5V when the device is biased at a gate voltage of 3V. Pinch off would be occurs at a drain voltage of 2.5V

0 like 0 dislike

112 views 1 answer

asked Feb 2, 2018 by anonymous

Justify the statement. Antiparallel diode is connected across MOSFET.

Last answer: In MOSFET current is flow from drain to source but when the load is inductive the current may flow in opposite direction. To avoid the opposite flow of current and to protect MOSFET the antiparallel diode is connected across MOSFET.

1 like 0 dislike

127 views 1 answer

asked Dec 7, 2017 by anonymous

Justify. Power MOSFET is operated at high enough gate source voltage to minimize the conduction losses.

Last answer: MOSFET is metal oxide field effect transistor. MOSFET is a voltage controlled device. MOSFET is majority carrier device. MOSFET are of two one is n-channel MOSFET and p-channel MOSFET. Gate, ... . Hence, power MOSFET is operated at high enough gate-source voltage to minimize the conduction losses.

2 like 0 dislike

753 views 1 answer

asked Sep 15, 2017 by anonymous

what is depletion type MOSFET?

What is depletion type MOSFET?..........

Last answer: Depletion MOSFET: Depletion MOSFET is a MOSFET in which the channel already exists. If we apply a voltage between drain and source then the drain current will flow even if the gate to source ... in figure. The drain current will be reduced as the gate to source voltage made more negative.

1 like 0 dislike

134 views 1 answer

asked Sep 15, 2017 by anonymous

what is enhancement MOSFET?

What is enhancement MOSFET?...............

Last answer: Enhancement MOSFET: There are two types of MOSFET one is enhancement MOSFET and second is depletion MOSFET. In enhancement MOSFET channel is created by applying threshold voltage between gate and source ... mode. The enhancement MOSFET will not conduct if the gate to source voltage is zero.

1 like 0 dislike

140 views 1 answer

asked Sep 10, 2017 by anonymous

is mosfet current controlled device?

Last answer: No, MOSFET is not the curent controlled device. The current between drain and source which is drain current is controlled by applying a voltage between gate and source hence MOSFET is a voltage controlled device.

1 like 0 dislike

168 views 1 answer

asked Jun 18, 2018 by anonymous

The number of terminals present in IGBT is

The number of terminals present in IGBT is A) 2 B) 3 C) 4 D) 5

Last answer: The number of terminals present in IGBT is 3

0 like 0 dislike

67 views 1 answer

asked Jul 25, 2019 by anonymous

State the applications of MOSFET

Last answer: Applications of MOSFET: i) Switching-mode-power-supplies (SMPS) and linear power supplies. ii) Brushless DC motor drives iii) Solid state DC relay iv) Automobile applications v) Stepper motor controller vi) Lighting controls vii) Solenoid drivers viii) Robotics ix) Induction heating

0 like 0 dislike

53 views 1 answer

asked Mar 10, 2018 by anonymous

Explain switching model of MOSFET.

0 like 0 dislike

62 views 0 answers

asked Oct 13, 2019 by anonymous

Give the applications of IGBT

Last answer: 1) AC and DC motor drives 2) SMPS 3) Inverters 4) Choppers 5) Solid-state Relays 6) solid-state Contactors

0 like 0 dislike

53 views 1 answer

asked Mar 19, 2018 by anonymous

How can BJT be used as an amplifier?

0 like 0 dislike

68 views 0 answers

asked Sep 10, 2017 by anonymous

what are bjt amplifiers used for?

Last answer: Transformer coupled amplifiers Direct coupled amplifiers Multistage amplifiers Darlington amplifiers Emmiter follower

1 like 0 dislike

70 views 1 answer

asked Jun 18, 2018 by anonymous

If the base current of a BJT is 250 µA and emitter current is 15 mA, then the common base current gain will be

If the base current of a BJT is 250 µA and emitter current is 15 mA, then the common base current gain will be A) 0.98 B) 0.41 C) 59 D) 55

Last answer: If the base current of a BJT is 250 µA and emitter current is 15 mA, then the common base current gain will be 0.98

0 like 0 dislike

150 views 1 answer

asked Mar 19, 2018 by anonymous

What is the difference between BJT and FET?

Last answer: BJT is a current opperated transistor while FET is a field opperated transistor.

0 like 0 dislike

2.6k views 1 answer

asked Sep 5, 2018 by anonymous

Compare between BJT and FET on the basis of (i) Biolar/Unipolar (ii) Tharmal Runaway (iii) Noise (iv) Applications

Last answer: Parameter BJT FET Bipolar/Unipolar It is bipolar device i.e. current in this device is carried by electrons and holes. It is unipolar device i.e. current ... in oscilloscopes, electronic voltmeters and other measuring and testing equipment because of their high input impedance.

0 like 0 dislike

712 views 1 answer

asked Sep 20, 2017 by anonymous

what is the value of Beta in power BJT?

What is the value of Beta in power BJT?

Last answer: The beta value in power BJT is 5 to 10.

1 like 0 dislike

83 views 1 answer

asked Jul 24, 2019 by anonymous

State reason BJT is called as bipolar junction transistor.

Last answer: BJT is called bipolar junction transistor because in BJT current conduction takes place due to majority as well as minority charge carriers.

0 like 0 dislike

4.9k views 1 answer

asked Apr 26, 2018 by anonymous

An FET is a better chopper than a BJT because it has

An FET is a better chopper than a BJT because it has (A) lower offset voltage (B) higher series ON resistance (C) lower input current (D) higher input impedance

Last answer: An FET is a better chopper than a BJT because it has lower offset voltage

0 like 0 dislike

551 views 1 answer

asked Mar 19, 2018 by anonymous

What is a BJT amplifier?

0 like 0 dislike

75 views 0 answers

asked Mar 10, 2018 by anonymous

What is a BJT?

Last answer: Bipolar Junction Transistor (BJT): BJT is a Bipolar device. (Uses both electrons and holes charge carrier for current conduction) Two Junctions (Emitter junction & collector ... mode (Current amplification) Cutoff mode (Open switch) Saturation mode (Close switch)

0 like 0 dislike

709 views 2 answers

asked Sep 23, 2017 by anonymous

Is BJT current controlled or voltage controlled?

Last answer: BJT is current controlled device.

3 like 0 dislike

122 views 4 answers

anonymous · Answer 1 · 2017-09-22T16:29:14+0000

answered Sep 22, 2017 by anonymous

ON state losses of IGBT is less as compared to MOSFET and BJT.

why igbt is used instead of bjt and mosfet?

Please log in or register to add a comment.

Please log in or register to answer this question.

1 Answer

Please log in or register to add a comment.

Related questions