Answer :
Active , Saturation , Cut-off region of operations in BJT.
asked
Sep 27, 2017
by
anonymous
Answer :
Transformer coupled amplifiers Direct coupled amplifiers Multistage amplifiers Darlington amplifiers Emmiter follower
asked
Sep 10, 2017
by
anonymous
Answer :
In cut-off region of BJT both the emitter-base junction and collector-base junction are reverse biased.
asked
Sep 27, 2017
by
anonymous
Description : What is a BJT?
Answer :
Bipolar Junction Transistor (BJT): BJT is a Bipolar device. (Uses both electrons and holes charge carrier for current conduction) Two Junctions (Emitter junction & collector ... mode (Current amplification) Cutoff mode (Open switch) Saturation mode (Close switch)
asked
Mar 10, 2018
by
anonymous
Answer :
The proper flow of zero signal collector current and the maintenance of the proper collector emmiter voltage during passage of single called as transistor biasing
asked
Sep 10, 2017
by
anonymous
Answer :
Beta is the current gain which is the ratio of collector current to base current.
asked
Sep 10, 2017
by
anonymous
Answer :
Bipolar junction transistor
asked
Sep 10, 2017
by
anonymous
Description : An FET is a better chopper than a BJT because it has (A) lower offset voltage (B) higher series ON resistance (C) lower input current (D) higher input impedance
Answer :
An FET is a better chopper than a BJT because it has lower offset voltage
asked
Apr 26, 2018
by
anonymous
Answer :
Yes IGBT is costlier than BJT and MOSFET.
asked
Sep 29, 2017
by
anonymous
Answer :
Yes BJT have internal capacitances.
asked
Sep 27, 2017
by
anonymous
Answer :
BJT act as switch in saturation and cutoff region ( ON state in saturation region and OFF state in cut-off region )
asked
Sep 27, 2017
by
anonymous
Answer :
Active region of BJT act as amplifier.
asked
Sep 27, 2017
by
anonymous
Answer :
Yes BJT have second breakdown problem.
asked
Sep 23, 2017
by
anonymous
Answer :
BJT is current controlled device.
asked
Sep 23, 2017
by
anonymous
Answer :
BJT have three terminals Base, emitter and collector.
asked
Sep 21, 2017
by
anonymous
Answer :
In BJT there is movement of electrons and holes accros the junctions which is basicaly current flow.
asked
Sep 10, 2017
by
anonymous
Answer :
When Q-point is at cut off region means it is just above the horizontal axis VCE
asked
Sep 10, 2017
by
anonymous
Answer :
BJT control the flow of electron so it is a active device.
asked
Sep 10, 2017
by
anonymous
Answer :
No, BJT is a current controlled device .
asked
Sep 10, 2017
by
anonymous
Description : What is the difference between BJT and FET?
Answer :
BJT is a current opperated transistor while FET is a field opperated transistor.
Description : What is a BJT amplifier?
Description : What is the difference between beta and forced beta for BJT?
asked
Feb 20, 2018
by
anonymous
Description : What is the value of Beta in power BJT?
Answer :
The beta value in power BJT is 5 to 10.
asked
Sep 20, 2017
by
anonymous
Description : State 2 advantages of JFET over BJT.
Answer :
Advantages of JFET over BJT: 1) High input impedance 2) Better thermal stability 3) Produce less noise 4) Smaller than BJT 5) Rugged in construction and simpler to fabricate 6) High degree of isolation between Input and Output.
asked
Jun 24, 2020
by
anonymous
Description : List specification of BJT.
Answer :
* The bipolar junction transistor (BJT) has small signal current gain, α (hfb). * Maximum collector current Ic (max). * Maximum collector to emitter voltage, VCE (max). * Collector to emitter ... . * Collector to emitter cut off voltage, VCEO. * Base emitter saturation voltage, VBE (sat).
asked
May 2, 2020
by
anonymous
Description : State reason BJT is called as bipolar junction transistor.
Answer :
BJT is called bipolar junction transistor because in BJT current conduction takes place due to majority as well as minority charge carriers.
asked
Jul 24, 2019
by
anonymous
Description : List configurations of BJT.
Answer :
Configurations of BJT : 1) Common Base (CB) configuration 2) Common Emitter (CE) configuration 3) Common Collector (CC) configuration
asked
Jul 10, 2019
by
anonymous
Description : State the need of biasing of BJT.
Answer :
Need of biasing: The basic need of transistor biasing is to keep the base-emitter (B-E) junction properly forward biased and the collector-emitter (C-E) junction properly reverse biased ... transistor biasing is necessary for normal and proper operation of transistor to be used for amplification.
Description : Draw circuit diagram of voltage divider biasing list two advantages of voltage divider biasing of BJT.
Answer :
Two advantages of voltage divider biasing of BJT. 1. It is very simple method of transistor biasing. 2. The biasing conditions can be very easily set. 3. there is no loading of ... 5. The resistor RE introduces a negative feedback. So all the advantages of negative feedback are obtained.
asked
Sep 5, 2018
by
anonymous
Description : Compare BJT with FET
Answer :
FET BJT It is unipolar device i.e. current in the device is carried either by electrons or holes It is bipolar device i.e. current in the device is carried either by ... from minority- carrier storage effects & therefore has lower switching speeds & cut-off frequencies.
asked
Sep 5, 2018
by
anonymous
Description : Compare between BJT and FET on the basis of (i) Biolar/Unipolar (ii) Tharmal Runaway (iii) Noise (iv) Applications
Answer :
Parameter BJT FET Bipolar/Unipolar It is bipolar device i.e. current in this device is carried by electrons and holes. It is unipolar device i.e. current ... in oscilloscopes, electronic voltmeters and other measuring and testing equipment because of their high input impedance.
asked
Sep 5, 2018
by
anonymous
Description : If the base current of a BJT is 250 µA and emitter current is 15 mA, then the common base current gain will be A) 0.98 B) 0.41 C) 59 D) 55
Answer :
If the base current of a BJT is 250 µA and emitter current is 15 mA, then the common base current gain will be 0.98
asked
Jun 18, 2018
by
anonymous
Description : Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown
Answer :
Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown
asked
Apr 28, 2018
by
anonymous
Description : How can BJT be used as an amplifier?
Description : Is the input impedance of MOSFET more than BJT and FET?
Answer :
Yes, the input impedance of MOSFET more than BJT and FET.
asked
Mar 19, 2018
by
anonymous
Description : Explain open emitter BJT drive circuit.
Answer :
open emitter BJT drive circuit:
asked
Feb 19, 2018
by
anonymous
Description : Explain the formation of parasitic BJT and parasitic diode in Power MOSFET. Can parasitic diode be used in same power electronics applications?
Answer :
Parasitic Diode: The parasitic diode is in between drain and source. The MOSFET structure itself contains parasitic diode or body drain diode. This parasitic diode allows the reverse flow of current when the ... of MOSFET as a BJT collector. Parasitic BJT operates in the cut-off region.
asked
Feb 6, 2018
by
anonymous
Description : Operating frequency of power MOSFET is higher than that of power BJT. Justify the statement.
Answer :
Power MOSFET have high turning on and turning off capability high switching speed of MOSFET is due to the high rate of change of drain voltage. The switching losses of power MOSFET ... lower frequency. Hence, operating frequency of power MOSFET is higher than that of power BJT.
asked
Feb 3, 2018
by
anonymous
Description : Compare BJT, MOSFET and IGBT .
Answer :
BJT MOSFET IGBT BJT is a current controlled device. MOSFET is a voltage controlled device. IGBT is a voltage controlled device. The input impedance of BJT is low. ... is minority carrier device. MOSFET is majority carrier device. IGBT is minority carrier device.
asked
Nov 10, 2017
by
anonymous
Description : Explain the on state losses in power BJT.
Answer :
On state losses in power BJT: Transistor have four types of losses one is turn on state losses second is turn off state losses third is turn on switching losses and fourth is turn ... ON = VCE sat x IC With increasing collector current collector to emitter saturation voltage increases.
asked
Sep 15, 2017
by
anonymous
Answer :
Because it has a higher switching frequency and heat tolerance.
asked
Sep 15, 2017
by
anonymous
Answer :
ON state losses of IGBT is less as compared to MOSFET and BJT.
asked
Sep 13, 2017
by
anonymous
Description : Power transistors with heat sink are fixed by
Answer :
Power transistors with heat sink are fixed by Fastening
asked
May 14, 2018
by
anonymous
Description : In IC, transistors are utilised as diodes.To get highest breakdown voltage for such diode, it is adjusted to have A) Ie=0 B) Ic=0 C) Vcb=0 D) Vce=0
asked
Apr 5, 2018
by
anonymous
Description : Draw symbol of NPN and PNP transistors.
Answer :
symbol of NPN and PNP transistors
asked
May 16, 2020
by
anonymous
Description : For a symmetrical emitter coupled differential amplifier using transistors of current gain 100, constant current source of 2 mA and with Vcc=10 V, differential input resistance in kOhm is about A) 2.5 B) 5 C) 10 D) 50
asked
Apr 5, 2018
by
anonymous
Description : can transistors amplify voltage?
Answer :
Yup
Description : ECL is the fastest of all logic families. High Speed in ECL is possible because transistors are used in difference amplifier configuration, in which they are never driven into ............... (1) Race condition (2) Saturation (3) Delay (4) High impedance
Answer :
Answer: 2 Explanation: Emitter-coupled logic (ECL) is the fastest of all logic families and therefore is used in applications where very high speed is essential. High speeds have become ... configuration, in which they are never driven into saturation and thereby the storage time is eliminated.
Description : Most of the transistors are NPN type and not PNP type because 1.NPN transistor gives large voltage gain 2.NPN transistors are more negative than PNP transistors 3.In NPN transistor, the current conduction is by free electrons which are less mobiles than holes 4.We can have high conduction is NPN transistors
Answer :
Most of the transistors are NPN type and not PNP type because We can have high conduction is NPN transistors
asked
May 13, 2018
by
anonymous
Description : What did the first electronic digital computer contain ? (1) Transistors (2) Valves (3) Core memory (4) Semiconductor memory
Answer :
Valves