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How can BJT be used as an amplifier?
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Description :

What is a BJT amplifier?

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Description :

Answer :

Active region of BJT act as amplifier.

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Description :

The effect of a finite gain of an operational amplifier used in an integrator is that (A) it would not integrate (B) the slope of the output will vary with time (C) the final value of the output voltage will reduce (D) there will be instability in the circuit

Answer :

The effect of a finite gain of an operational amplifier used in an integrator is that there will be instability in the circuit

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Answer :

Transformer coupled amplifiers Direct coupled amplifiers Multistage amplifiers Darlington amplifiers Emmiter follower

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Description :

What type of biasing is used in CE amplifier?

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Description :

 If the base current of a BJT is 250 µA and emitter current is 15 mA, then the common base current gain will be A) 0.98 B) 0.41 C) 59 D) 55  

Answer :

 If the base current of a BJT is 250 µA and emitter current is 15 mA, then the common base current gain will be 0.98 

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Description :

What is the difference between BJT and FET?

Answer :

BJT  is  a  current  opperated   transistor  while  FET   is  a  field   opperated  transistor.

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2.6k views 1 answer
Description :

How does an operational amplifier work?

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Description :

How does negative feedback reduces distortion in an amplifier?

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Description :

How can a magnetic field be used to generate an electric current?

Answer :

Magnetic  field  can  be  used  to  generate  electric  current  on  a  condition  that  it  is  on  a  rate  of  changing  magnetic  flux.  (Faraday's  law)

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Description :

Answer :

BJT have three terminals Base, emitter and collector.

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Description :

The unity gain bandwidth of an inverting amplifier is 10 MHz What would be the bandwidth if the gain is increased to 10 V/V? A) 100 MHz B) 1 MHz C) 10 MHz D) 1 kHz 

Answer :

The unity gain bandwidth of an inverting amplifier is 10 MHz What would be the bandwidth if the gain is increased to 10 V/V? A) 100 MHz B) 1 MHz C) 10 MHz D) 1 kHz 

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Description :

An amplifier has input power of 2 microwatts. The power gain of the amplifier is 60 dB. The output power will be

Answer :

An amplifier has input power of 2 microwatts. The power gain of the amplifier is 60 dB. The output power will be 2 watts

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Description :

The gain of an ideal amplifier must be

Answer :

The gain of an ideal amplifier must be infinity

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Description :

Answer :

ON state losses of IGBT is less as compared to MOSFET and BJT.

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Description :

State reason BJT is called as bipolar junction transistor.

Answer :

BJT is called bipolar junction transistor because in BJT current conduction takes place due to majority as well as minority charge carriers.

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Description :

Answer :

BJT act as switch in saturation and  cutoff region ( ON state in saturation region and OFF state in cut-off region )

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Description :

Answer :

Because it has a higher switching frequency and heat tolerance.

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Description :

An FET is a better chopper than a BJT because it has (A) lower offset voltage (B) higher series ON resistance (C) lower input current (D) higher input impedance

Answer :

An FET is a better chopper than a BJT because it has lower offset voltage

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Description :

A differential amplifier has a differential gain of 28000 and CMRR is 60 dB. What will be the value of common mode gain? A) Ac = 0.125 B) Ac = 0.33 C) Ac = 3 D) Ac = 28 

Answer :

A differential amplifier has a differential gain of 28000 and CMRR is 60 dB. What will be the value of common mode gain? A) Ac = 0.125 B) Ac = 0.33 C) Ac = 3 D) Ac = 28 

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Description :

Define gain and bandwidth of an amplifier.

Answer :

Bandwidth  The range of frequency over which the voltage gain is equal to or greater than 70.7% of its maximum value Gain: The ratio of output parameter (voltage/ current /power) to the input parameter (voltage/ current /power) of an amplifier is known as gain. It is denoted by a letter A

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Description :

An amplifier has a voltage gain of 120. To reduce distortion, 10% negative feedback is employed. The gain of the amplifier with feedback is  (1) 141 (2) 92.3 (3) 9.23 (4) 1.41

Answer :

An amplifier has a voltage gain of 120. To reduce distortion, 10% negative feedback is employed. The gain of the amplifier with feedback is 9.23

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Description :

What do you mean by frequency response of an amplifier?

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Description :

What is stability in an amplifier?

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Description :

State 2 advantages of JFET over BJT.

Answer :

Advantages of JFET over BJT: 1) High input impedance 2) Better thermal stability 3) Produce less noise 4) Smaller than BJT 5) Rugged in construction and simpler to fabricate 6) High degree of isolation between Input and Output. 

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Description :

List specification of BJT.

Answer :

* The bipolar junction transistor (BJT) has small signal current gain, α (hfb). * Maximum collector current Ic (max). * Maximum collector to emitter voltage, VCE (max). * Collector to emitter ... . * Collector to emitter cut off voltage, VCEO. * Base emitter saturation voltage, VBE (sat).

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Description :

List configurations of BJT. 

Answer :

Configurations of BJT : 1) Common Base (CB) configuration 2) Common Emitter (CE) configuration 3) Common Collector (CC) configuration

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Description :

State the need of biasing of BJT.

Answer :

Need of biasing: The basic need of transistor biasing is to keep the base-emitter (B-E) junction properly forward biased and the collector-emitter (C-E) junction properly reverse biased ... transistor biasing is necessary for normal and proper operation of transistor to be used for amplification. 

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Description :

Draw circuit diagram of voltage divider biasing list two advantages of voltage divider biasing of BJT.

Answer :

Two advantages of voltage divider biasing of BJT. 1. It is very simple method of transistor biasing. 2. The biasing conditions can be very easily set. 3. there is no loading of ... 5. The resistor RE introduces a negative feedback. So all the advantages of negative feedback are obtained. 

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Description :

Compare BJT with FET

Answer :

FET BJT It is unipolar device i.e. current in the device is carried either by electrons or holes It is bipolar device i.e. current in the device is carried either by ... from minority- carrier storage effects & therefore has lower switching speeds & cut-off frequencies. 

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Description :

Compare between BJT and FET on the basis of (i) Biolar/Unipolar (ii) Tharmal Runaway (iii) Noise (iv) Applications

Answer :

Parameter BJT FET Bipolar/Unipolar It is bipolar device i.e. current in this device is carried by electrons and holes. It is unipolar device i.e. current ... in oscilloscopes, electronic voltmeters and other measuring and testing equipment because of their high input impedance.

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Description :

Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown

Answer :

Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown

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Description :

Is the input impedance of MOSFET more than BJT and FET?

Answer :

Yes, the input impedance of MOSFET more than BJT and FET.

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Description :

What is a BJT?

Answer :

Bipolar Junction Transistor (BJT): BJT is a Bipolar device. (Uses both electrons and holes charge carrier for current conduction) Two Junctions (Emitter junction & collector ... mode (Current amplification) Cutoff mode (Open switch) Saturation mode (Close switch)

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Description :

What is the difference between beta and forced beta for BJT?

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Description :

Explain open emitter BJT drive circuit.

Answer :

open emitter BJT drive circuit:

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Description :

Explain the formation of parasitic BJT and parasitic diode in Power MOSFET. Can parasitic diode be used in same power electronics applications?

Answer :

Parasitic Diode: The parasitic diode is in between drain and source. The MOSFET structure itself contains parasitic diode or body drain diode. This parasitic diode allows the reverse flow of current when the ... of MOSFET as a BJT collector. Parasitic BJT operates in the cut-off region.

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Description :

Operating frequency of power MOSFET is higher than that of power BJT. Justify the statement.

Answer :

Power MOSFET have high turning on and turning off capability high switching speed of MOSFET is due to the high rate of change of drain voltage. The switching losses of power MOSFET ... lower frequency. Hence, operating frequency of power MOSFET is higher than that of power BJT.

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Description :

Compare BJT, MOSFET and IGBT .

Answer :

BJT MOSFET IGBT BJT is a current controlled device. MOSFET is a voltage controlled device. IGBT is a voltage controlled device. The input impedance of BJT is low. ... is minority carrier device. MOSFET is majority carrier device. IGBT is minority carrier device.

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Description :

Answer :

Yes IGBT is costlier than BJT and MOSFET.

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Description :

Answer :

Yes BJT have internal capacitances.

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Description :

Answer :

In cut-off region of BJT both the emitter-base junction and collector-base junction are reverse biased.

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Description :

Answer :

Active , Saturation , Cut-off region of operations in BJT.

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Description :

Answer :

Yes BJT have second breakdown problem.

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Description :

Answer :

BJT is current controlled device.

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Description :

What is the value of Beta in power BJT?

Answer :

The beta value in power BJT is 5 to 10.

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Description :

Explain the on state losses in power BJT.

Answer :

On state losses in power BJT: Transistor have four types of losses one is turn on state losses second is turn off state losses third is turn on switching losses and fourth is turn ... ON = VCE sat x IC With increasing collector current collector to emitter saturation voltage increases.

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Description :

Answer :

In  BJT  there  is  movement  of   electrons  and  holes   accros  the  junctions  which  is  basicaly  current  flow.

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Description :

Answer :

When Q-point is at cut off region means it is just above the horizontal axis VCE

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Description :

Answer :

The proper flow of zero signal collector current and the maintenance of the proper collector emmiter voltage during passage of single called as transistor biasing

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