menu search
person
Operating frequency of power MOSFET is higher than that of power BJT. Justify the statement.
thumb_up_alt 2 like thumb_down_alt 0 dislike
738 views

1 Answer

Power MOSFET have high turning on and turning off capability high switching speed of MOSFET is due to the high rate of change of drain voltage. The switching losses of power MOSFET is low means MOSFET provide higher efficiency for higher frequency. But the conduction losses of power MOSFET is more. The power MOSFET is the positive temperature coefficient device means as the temperature increases the internal resistance of MOSFET will also increase. The voltage and current rating of power MOSFET is low. The conduction voltage of MOSFET is higher than bipolar.

In case of BJT, the switching losses are more but conduction losses are less. BJT provides more efficiency at a lower frequency. Hence, operating frequency of power MOSFET is higher than that of power BJT.

thumb_up_alt 0 like thumb_down_alt 0 dislike
← Prev Question Next Question →

Related questions

Description :

Explain the formation of parasitic BJT and parasitic diode in Power MOSFET. Can parasitic diode be used in same power electronics applications?

Answer :

Parasitic Diode: The parasitic diode is in between drain and source. The MOSFET structure itself contains parasitic diode or body drain diode. This parasitic diode allows the reverse flow of current when the ... of MOSFET as a BJT collector. Parasitic BJT operates in the cut-off region.

thumb_up_alt 1 like thumb_down_alt 0 dislike
2.5k views 1 answer
Description :

Answer :

Because it has a higher switching frequency and heat tolerance.

thumb_up_alt 1 like thumb_down_alt 0 dislike
115 views 1 answer
Description :

Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown

Answer :

Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown

thumb_up_alt 0 like thumb_down_alt 0 dislike
3.1k views 1 answer
Description :

Compare BJT, MOSFET and IGBT .

Answer :

BJT MOSFET IGBT BJT is a current controlled device. MOSFET is a voltage controlled device. IGBT is a voltage controlled device. The input impedance of BJT is low. ... is minority carrier device. MOSFET is majority carrier device. IGBT is minority carrier device.

thumb_up_alt 1 like thumb_down_alt 0 dislike
374 views 1 answer
Description :

Answer :

ON state losses of IGBT is less as compared to MOSFET and BJT.

thumb_up_alt 1 like thumb_down_alt 0 dislike
118 views 1 answer
Description :

Is the input impedance of MOSFET more than BJT and FET?

Answer :

Yes, the input impedance of MOSFET more than BJT and FET.

thumb_up_alt 0 like thumb_down_alt 0 dislike
384 views 1 answer
Description :

Answer :

Yes IGBT is costlier than BJT and MOSFET.

thumb_up_alt 0 like thumb_down_alt 0 dislike
2.6k views 1 answer
Description :

Answer :

MOSFET provides better efficiency at high frequency and its high speed switching losses are less hence MOSFET is used for high frequency.

thumb_up_alt 1 like thumb_down_alt 0 dislike
101 views 1 answer
Description :

Answer :

Active , Saturation , Cut-off region of operations in BJT.

thumb_up_alt 0 like thumb_down_alt 0 dislike
2.6k views 2 answers
Description :

Justify the statement. Antiparallel diode is connected across MOSFET.

Answer :

In MOSFET current is flow from drain to source but when the load is inductive the current may flow in opposite direction. To avoid the opposite flow of current and to protect MOSFET the antiparallel diode is connected across MOSFET.

thumb_up_alt 1 like thumb_down_alt 0 dislike
139 views 1 answer
Description :

Answer :

Yes MOSFET can operate at very high frequency.

thumb_up_alt 0 like thumb_down_alt 0 dislike
85 views 1 answer
Description :

Justify. Power MOSFET is operated at high enough gate source voltage to minimize the conduction losses. 

Answer :

MOSFET is metal oxide field effect transistor. MOSFET is a voltage controlled device. MOSFET is majority carrier device. MOSFET are of two one is n-channel MOSFET and p-channel MOSFET. Gate, ... . Hence, power MOSFET is operated at high enough gate-source voltage to minimize the conduction losses.

thumb_up_alt 2 like thumb_down_alt 0 dislike
778 views 1 answer
Description :

Two synchronous generators operating in parallel supply a common load of 2.5 MW. The frequency-power characteristics have a common slope of 1 MW/Hz and the no-load frequencies of the generators are 51.5 Hz and 51.0 Hz, respectively. Then the system frequency is (A) 50 Hz (B) 51 Hz (C) 51.25 Hz (D) 51.5 Hz

Answer :

Two synchronous generators operating in parallel supply a common load of 2.5 MW. The frequency-power characteristics have a common slope of 1 MW/Hz and the no-load frequencies of the generators are 51.5 Hz and 51.0 Hz, respectively. Then the system frequency is 50 Hz

thumb_up_alt 0 like thumb_down_alt 0 dislike
88 views 1 answer
Description :

Explain the on state losses in power BJT.

Answer :

On state losses in power BJT: Transistor have four types of losses one is turn on state losses second is turn off state losses third is turn on switching losses and fourth is turn ... ON = VCE sat x IC With increasing collector current collector to emitter saturation voltage increases.

thumb_up_alt 2 like thumb_down_alt 0 dislike
252 views 1 answer
Description :

Answer :

In cut-off region of BJT both the emitter-base junction and collector-base junction are reverse biased.

thumb_up_alt 0 like thumb_down_alt 0 dislike
70 views 2 answers
Description :

 operating principle of PUT.

Answer :

Constructional diagram & Operating principle of PUT:  The PUT is a PNPN device similar to SCR, but its operation is similar to the UJT. The PUT behave like a UJT whose trigger voltage VP can be set ... low resistance and VAK ≈ 1V). The PUT is also referred to as a complementary SCR (CSCR). 

thumb_up_alt 0 like thumb_down_alt 0 dislike
84 views 1 answer
Description :

In a 230 V, 50 Hz single-phase SCR bridge converter operating at a firing delay angle, α and with large R-L load, the input source current is (A) sinusoidal current (B) constant dc current (C) continuous rectangular pulses (D) alternating rectangular pulses

Answer :

In a 230 V, 50 Hz single-phase SCR bridge converter operating at a firing delay angle, α and with large R-L load, the input source current is alternating rectangular pulses

thumb_up_alt 0 like thumb_down_alt 0 dislike
132 views 1 answer
Description :

The device which allows reverse power flow and withstands highest switch frequency is (A) GTO (B) MOSFET (C) IGBT (D) Inverter grade SCR

Answer :

The device which allows reverse power flow and withstands highest switch frequency is MOSFET

thumb_up_alt 0 like thumb_down_alt 0 dislike
68 views 1 answer
Description :

What is the difference between beta and forced beta for BJT?

thumb_up_alt 0 like thumb_down_alt 0 dislike
536 views 0 answers
Description :

Explain open emitter BJT drive circuit.

Answer :

open emitter BJT drive circuit:

thumb_up_alt 0 like thumb_down_alt 0 dislike
240 views 1 answer
Description :

Describe with neat sketch the construction and working principle of MOSFET.

Answer :

Construction and working principle of MOSFET:  A) Depletion type MOSFET: Construction: The N-channel depletion type MOSFET is formed on P-type silicon substrate with two heavily ... accumulation of electrons and hence more current. Thus the MOSFET is a gate voltage controlled device.

thumb_up_alt 0 like thumb_down_alt 0 dislike
2.7k views 1 answer
Description :

State the applications of MOSFET

Answer :

Applications of MOSFET: i) Switching-mode-power-supplies (SMPS) and linear power supplies. ii) Brushless DC motor drives iii) Solid state DC relay iv) Automobile applications v) Stepper motor controller vi) Lighting controls vii) Solenoid drivers viii) Robotics ix) Induction heating

thumb_up_alt 0 like thumb_down_alt 0 dislike
60 views 1 answer
Description :

The threshold voltage of an n- channel enhancement mode MOSFET is 0.5V when the device is biased at a gate voltage of 3V. Pinch off would be occurs at a drain voltage of (A) 1.5V (B) 2.5V (C) 3.5V (D) 4.5V

Answer :

The threshold voltage of an n- channel enhancement mode MOSFET is 0.5V when the device is biased at a gate voltage of 3V. Pinch off would be occurs at a drain voltage of 2.5V

thumb_up_alt 0 like thumb_down_alt 0 dislike
132 views 1 answer
Description :

Explain switching model of MOSFET.

thumb_up_alt 0 like thumb_down_alt 0 dislike
69 views 0 answers
Description :

Explain MOSFET gate drive circuit and totem pole configuration.

Answer :

MOSFET gate drive circuit: The turning on and turning off of MOSFET can be controlled from gate to source voltage signal. If the gate to source voltage of MOSFET exceeds threshold ... this configuration, the two switches (transistors) are used in totem pole arrangement with a comparator.

thumb_up_alt 0 like thumb_down_alt 0 dislike
284 views 1 answer
Description :

parallel operation of MOSFET can be done more easily as compared to thyristor. why?

Answer :

Parallel operation of MOSFET can be done more easily as compared to thyristor because the resistance of MOSFET is increases with increase in temperature. MOSFET have the positive temperature coefficient. In ... the parallel operation of MOSFET can be done more easily as compared to the thyristor.

thumb_up_alt 2 like thumb_down_alt 0 dislike
270 views 1 answer
Description :

Explain difference between enhancement MOSFET and depletion type MOSFET.

Answer :

In enhancement MOSFET channel is not initially exists but in depletion MOSFET channel is already exists. In case of depletion MOSFET if the voltage is applied between drain and source the drain current will flow ... a channel. depletion MOSFET & enhancement MOSFET

thumb_up_alt 0 like thumb_down_alt 0 dislike
408 views 1 answer
Description :

Explain the series and parallel operation of MOSFET. Which is suitable and why?

Answer :

Series operation of MOSFET: To increase voltage handling capability MOSFETs are connected in series. When the MOSFETs are connected in series each MOSFET should turn on and turn off ... on and turn off time and transconductance. Each MOSFET should share current equally.  

thumb_up_alt 1 like thumb_down_alt 0 dislike
476 views 1 answer
Description :

What is depletion type MOSFET?..........

Answer :

Depletion MOSFET: Depletion MOSFET is a MOSFET in which the channel already exists. If we apply a voltage between drain and source then the drain current will flow even if the gate to source ... in figure. The drain current will be reduced as the gate to source voltage made more negative.

thumb_up_alt 1 like thumb_down_alt 0 dislike
141 views 1 answer
Description :

What is enhancement MOSFET?...............

Answer :

Enhancement MOSFET: There are two types of MOSFET one is enhancement MOSFET and second is depletion MOSFET. In enhancement MOSFET channel is created by applying threshold voltage between gate and source ... mode. The enhancement MOSFET will not conduct if the gate to source voltage is zero.

thumb_up_alt 1 like thumb_down_alt 0 dislike
148 views 1 answer
Description :

Answer :

No, MOSFET is not the curent controlled device. The current between drain and source which is drain current is controlled by applying a voltage between gate and source hence MOSFET is a voltage controlled device. 

thumb_up_alt 1 like thumb_down_alt 0 dislike
174 views 1 answer
Description :

Answer :

already answered here is mosfet current controlled device?

thumb_up_alt 1 like thumb_down_alt 0 dislike
137 views 1 answer
Description :

An FET is a better chopper than a BJT because it has (A) lower offset voltage (B) higher series ON resistance (C) lower input current (D) higher input impedance

Answer :

An FET is a better chopper than a BJT because it has lower offset voltage

thumb_up_alt 0 like thumb_down_alt 0 dislike
598 views 1 answer
Description :

What is the power factor when a single phase watt meter operating on 200 V and 5 A for 5 hours makes 2016 revolutions and the meter constant in revolution is 420? A) 0.04 B) 1.04 C) 0.96 D) None of these

Answer :

What is the power factor when a single phase watt meter operating on 200 V and 5 A for 5 hours makes 2016 revolutions and the meter constant in revolution is 420? A) 0.04 B) 1.04 C) 0.96 D) None of these

thumb_up_alt 0 like thumb_down_alt 0 dislike
148 views 1 answer
Description :

A 230 V/460 V single-phase transformer operating at 20 A and unity power factor has primary referred resistance of 0.2 Ω and reactance of 0.5 Ω. The approximate primary induced emf is (A) 216 V (B) 226 V (C) 234 V (D) 236 V

Answer :

A 230 V/460 V single-phase transformer operating at 20 A and unity power factor has primary referred resistance of 0.2 Ω and reactance of 0.5 Ω. The approximate primary induced emf is 226 V

thumb_up_alt 0 like thumb_down_alt 0 dislike
94 views 1 answer
Description :

Answer :

Annual operating expenditure of a power plant consists of fixed charges, semi-fixed charges, running charges.

thumb_up_alt 0 like thumb_down_alt 0 dislike
53 views 1 answer
Description :

The command line interpreter that enables the users to interact with operating system is called the A) Window B) Shell C) Process D) Kernel 

Answer :

The command line interpreter that enables the users to interact with operating system is called the Shell 

thumb_up_alt 0 like thumb_down_alt 0 dislike
69 views 1 answer
Description :

What is the value of Beta in power BJT?

Answer :

The beta value in power BJT is 5 to 10.

thumb_up_alt 1 like thumb_down_alt 0 dislike
91 views 1 answer
Description :

A certain power MOSFET has a maximum junction temperature specification of 1500o C, a junction-to-case thermal resistance of 1.00 C/W, and a junction-to ambient thermal resistance of 600 C/W. If the ambient temperature is 300o C, then the maximum allowable power dissipation in the device will be A) 1.52 W B) 1.72 W C) 1.92W D) 2.00 W

Answer :

A certain power MOSFET has a maximum junction temperature specification of 1500o C, a junction-to-case thermal resistance of 1.00 C/W, and a junction-to ambient thermal resistance of  ... 300o C, then the maximum allowable power dissipation in the device will be 2.00 W 

thumb_up_alt 0 like thumb_down_alt 0 dislike
124 views 1 answer
Description :

Answer :

MOSFET have high current losses due to High on state resistance. Hence MOSFET is used for low power applications.

thumb_up_alt 0 like thumb_down_alt 0 dislike
85 views 1 answer
Description :

In MOSFET, the polarity of the inversion layers is the same as that of?

Answer :

In MOSFET, the polarity of the inversion layers is the same as that of majority carriers in the source.

thumb_up_alt 0 like thumb_down_alt 0 dislike
110 views 1 answer
Description :

The SCR would be turned OFF by voltage reversal of applied anode-cathode ac supply frequency of A) 10 kHz B) 10 Hz C) 5 kHz D) 5 Hz 

thumb_up_alt 0 like thumb_down_alt 0 dislike
163 views 0 answers
Description :

Which of the following thyristors can be used for high frequency of operation? A) TRIAC B) DIAC C) SCR D) GTO 

Answer :

Which of the following thyristors can be used for high frequency of operation? A) TRIAC B) DIAC C) SCR D) GTO 

thumb_up_alt 0 like thumb_down_alt 0 dislike
86 views 1 answer
Description :

Transistor operating configurations

Answer :

Transistor operating configurations

thumb_up_alt 0 like thumb_down_alt 0 dislike
49 views 1 answer
Description :

Draw construction of Megger and write operating principle of it.

Answer :

Megger:  Working: Two coils the current coil and pressure coil are mounted at an angle on the same spindle and form the part of the moving system. These coils are connected to a small hand driven ... . When the instrument is not working the pointer may rest at any position on the dial.

thumb_up_alt 0 like thumb_down_alt 0 dislike
241 views 2 answers
Description :

Explain the operating principle of LASER and list applications of LASER diode.

Answer :

A basic construction of Laser diode is as shown . A PN junction is formed by two layers of doped gallium arsenide. There is highly reflective surface at one end of PN junction and ... 6. laser scanning and light beam illumination. 7. Military applications 8. Medical surgery 9.Diamond cutting

thumb_up_alt 0 like thumb_down_alt 0 dislike
224 views 1 answer
Description :

The operating point of a protective current transformer is near the

Answer :

The operating point of a protective current transformer is near the Ankle point

thumb_up_alt 0 like thumb_down_alt 0 dislike
94 views 1 answer
Description :

The operating time of instantaneous relay is

Answer :

The operating time of instantaneous relay is 0.1 sec

thumb_up_alt 0 like thumb_down_alt 0 dislike
102 views 1 answer
Description :

A minimum clearance of 6.3 m to ground is required for overhead lines when operating voltages are :  (A) less than 66 kV (B) lie between 66 kV and 110 kV (C) more than 165 kV (D) lie between 110 kV and 165 kV

Answer :

A minimum clearance of 6.3 m to ground is required for overhead lines when operating voltages are : lie between 66 kV and 110 kV

thumb_up_alt 0 like thumb_down_alt 0 dislike
115 views 1 answer
Description :

In a single-phase induction motor, the operating direction is determined by the ________ A) Rotor B) Stator C) Starting circuit D) None of these

Answer :

In a single-phase induction motor, the operating direction is determined by the Starting circuit

thumb_up_alt 0 like thumb_down_alt 0 dislike
84 views 1 answer
editAsk a Question
...