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Compare BJT, MOSFET and IGBT .

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BJT MOSFET IGBT
BJT is a current controlled device. MOSFET is a voltage controlled device. IGBT is a voltage controlled device.
The input impedance of BJT is low. The input impedance of MOSFET is high. The input impedance of IGBT is high.
The drive circuit of BJT is complex. The drive circuit of MOSFET is simple. The drive circuit of IGBT is simple.
Switching speed of BJT is in the range of microseconds means slow switching speed. Switching speed of MOSFET is in the range of nanoseconds means fast switching speed. Switching speed of IGBT is more than BJT but less than MOSFET.
BJT is the negative temperature coefficient device. MOSFET is the positive temperature coefficient device. IGBT shows negative temperature coefficient up to 70% after that it shows positive temperature coefficient.
Conduction losses are low. Conduction losses are high. Conduction losses are low.
Switching losses are high for high frequency. Switching losses are low for high frequency. Switching losses are low for high frequency.
BJT is a bipolar device. MOSFET is a unipolar device. IGBT if bipolar device.
BJT is minority carrier device. MOSFET is majority carrier device. IGBT is minority carrier device.


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Related questions

Description : Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown

Answer : Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown

Description :

Answer : Because it has a higher switching frequency and heat tolerance.

Description :

Answer : ON state losses of IGBT is less as compared to MOSFET and BJT.

Description :

Answer : Yes IGBT is costlier than BJT and MOSFET.

Description : Explain the formation of parasitic BJT and parasitic diode in Power MOSFET. Can parasitic diode be used in same power electronics applications?

Answer : Parasitic Diode: The parasitic diode is in between drain and source. The MOSFET structure itself contains parasitic diode or body drain diode. This parasitic diode allows the reverse flow of current when the ... of MOSFET as a BJT collector. Parasitic BJT operates in the cut-off region.

Description : Operating frequency of power MOSFET is higher than that of power BJT. Justify the statement.

Answer : Power MOSFET have high turning on and turning off capability high switching speed of MOSFET is due to the high rate of change of drain voltage. The switching losses of power MOSFET ... lower frequency. Hence, operating frequency of power MOSFET is higher than that of power BJT.

Description : Is the input impedance of MOSFET more than BJT and FET?

Answer : Yes, the input impedance of MOSFET more than BJT and FET.

Description : Compare BJT with FET

Answer : FET BJT It is unipolar device i.e. current in the device is carried either by electrons or holes It is bipolar device i.e. current in the device is carried either by ... from minority- carrier storage effects & therefore has lower switching speeds & cut-off frequencies. 

Description : Compare JFET with MOSFET.

Answer : Particulars JFET MOSFET 1) Type Voltage controlled device Voltage controlled device 2) Mode of operation Operates only in depletion mode Operates in depletion and enhancement ... 6) Gate connection Not isolated from substrate Isolated by SiO2 layer from substrate

Description : Describe with neat sketch the constructional details of IGBT.

Answer : Construction: Insulated gate bipolar transistor or IGBT, is a solid state devices primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast ... layer and p+ emitter constitute a BJT with a wide base region and hence small current gain.

Description : Draw construction of IGBT.

Answer : construction of IGBT

Description : Justify the statements. 1. IGBT uses a vertically oriented structure. 2. IGBT is preferred as a power switch over both power BJT and MOSFET. 3. Punch through IGBT structure are more popular and are widely used.

Answer : 1. IGBT uses vertically oriented structure. IGBT use vertically oriented structure to reduce the resistance and to increase the current flow area. Hence IGBT uses vertically oriented ... DC circuit applications. Hence punch through IGBT structure are more popular and are widely used.

Description : Also, highlight the problem faced during parallel operation.

Answer : Parallel operation of IGBT: Parallel operation of IGBT is done for obtaining high current rating. Paralleling of IGBT reduces conduction losses and thermal stress. IGBT combines the qualities of ... . IGBTs must share losses equally otherwise IGBT may get failure due to thermal differences.

Description :

Answer : No, IGBT is not the current controlled device. IGBT is a voltage controlled device. IGBT have combine qualities of MOSFET and BJT. The high switching speed of MOSFET and low conduction losses of BJT. Also, IGBT which stands for Insulated Gate Bipolar Transistor have high input impedance.

Description :

Answer : IGBT is a bipolar device.

Description :

Answer :  IGBT or Insulated Gate Bi-polar Transistors are typically semiconductor devices aka.  controlled switches,  which find their applications in Power Electronics circuits such as Inverters, and electrical ... ( buy implementing suitable Pulse Width Modulation scheme ) * Lower cost 

Description :

Answer : IGBT is a bipolar device because current is carried by both holes and electrons.

Description : Compare between BJT and FET on the basis of (i) Biolar/Unipolar (ii) Tharmal Runaway (iii) Noise (iv) Applications

Answer : Parameter BJT FET Bipolar/Unipolar It is bipolar device i.e. current in this device is carried by electrons and holes. It is unipolar device i.e. current ... in oscilloscopes, electronic voltmeters and other measuring and testing equipment because of their high input impedance.

Description : What is the difference between beta and forced beta for BJT?

Description : Explain open emitter BJT drive circuit.

Answer : open emitter BJT drive circuit:

Description : Explain the on state losses in power BJT.

Answer : On state losses in power BJT: Transistor have four types of losses one is turn on state losses second is turn off state losses third is turn on switching losses and fourth is turn ... ON = VCE sat x IC With increasing collector current collector to emitter saturation voltage increases.

Description : Describe with neat sketch the construction and working principle of MOSFET.

Answer : Construction and working principle of MOSFET:  A) Depletion type MOSFET: Construction: The N-channel depletion type MOSFET is formed on P-type silicon substrate with two heavily ... accumulation of electrons and hence more current. Thus the MOSFET is a gate voltage controlled device.

Description : Explain MOSFET gate drive circuit and totem pole configuration.

Answer : MOSFET gate drive circuit: The turning on and turning off of MOSFET can be controlled from gate to source voltage signal. If the gate to source voltage of MOSFET exceeds threshold ... this configuration, the two switches (transistors) are used in totem pole arrangement with a comparator.

Description : Explain difference between enhancement MOSFET and depletion type MOSFET.

Answer : In enhancement MOSFET channel is not initially exists but in depletion MOSFET channel is already exists. In case of depletion MOSFET if the voltage is applied between drain and source the drain current will flow ... a channel. depletion MOSFET & enhancement MOSFET

Description : Explain the series and parallel operation of MOSFET. Which is suitable and why?

Answer : Series operation of MOSFET: To increase voltage handling capability MOSFETs are connected in series. When the MOSFETs are connected in series each MOSFET should turn on and turn off ... on and turn off time and transconductance. Each MOSFET should share current equally.  

Description : State the applications of MOSFET

Answer : Applications of MOSFET: i) Switching-mode-power-supplies (SMPS) and linear power supplies. ii) Brushless DC motor drives iii) Solid state DC relay iv) Automobile applications v) Stepper motor controller vi) Lighting controls vii) Solenoid drivers viii) Robotics ix) Induction heating

Description : The threshold voltage of an n- channel enhancement mode MOSFET is 0.5V when the device is biased at a gate voltage of 3V. Pinch off would be occurs at a drain voltage of (A) 1.5V (B) 2.5V (C) 3.5V (D) 4.5V

Answer : The threshold voltage of an n- channel enhancement mode MOSFET is 0.5V when the device is biased at a gate voltage of 3V. Pinch off would be occurs at a drain voltage of 2.5V

Description : Explain switching model of MOSFET.

Description : Justify the statement. Antiparallel diode is connected across MOSFET.

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Description : parallel operation of MOSFET can be done more easily as compared to thyristor. why?

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Description : Justify. Power MOSFET is operated at high enough gate source voltage to minimize the conduction losses. 

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Description : What is depletion type MOSFET?..........

Answer : Depletion MOSFET: Depletion MOSFET is a MOSFET in which the channel already exists. If we apply a voltage between drain and source then the drain current will flow even if the gate to source ... in figure. The drain current will be reduced as the gate to source voltage made more negative.

Description : What is enhancement MOSFET?...............

Answer : Enhancement MOSFET: There are two types of MOSFET one is enhancement MOSFET and second is depletion MOSFET. In enhancement MOSFET channel is created by applying threshold voltage between gate and source ... mode. The enhancement MOSFET will not conduct if the gate to source voltage is zero.

Description :

Answer : No, MOSFET is not the curent controlled device. The current between drain and source which is drain current is controlled by applying a voltage between gate and source hence MOSFET is a voltage controlled device. 

Description :

Answer : already answered here is mosfet current controlled device?

Description :

Answer : MOSFET provides better efficiency at high frequency and its high speed switching losses are less hence MOSFET is used for high frequency.

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Description : The number of terminals present in IGBT is A) 2 B) 3 C) 4 D) 5

Answer : The number of terminals present in IGBT is 3

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