Compare BJT, MOSFET and IGBT .

1 Answer

Answer :

 
BJT MOSFET IGBT
BJT is a current controlled device. MOSFET is a voltage controlled device. IGBT is a voltage controlled device.
The input impedance of BJT is low. The input impedance of MOSFET is high. The input impedance of IGBT is high.
The drive circuit of BJT is complex. The drive circuit of MOSFET is simple. The drive circuit of IGBT is simple.
Switching speed of BJT is in the range of microseconds means slow switching speed. Switching speed of MOSFET is in the range of nanoseconds means fast switching speed. Switching speed of IGBT is more than BJT but less than MOSFET.
BJT is the negative temperature coefficient device. MOSFET is the positive temperature coefficient device. IGBT shows negative temperature coefficient up to 70% after that it shows positive temperature coefficient.
Conduction losses are low. Conduction losses are high. Conduction losses are low.
Switching losses are high for high frequency. Switching losses are low for high frequency. Switching losses are low for high frequency.
BJT is a bipolar device. MOSFET is a unipolar device. IGBT if bipolar device.
BJT is minority carrier device. MOSFET is majority carrier device. IGBT is minority carrier device.


Like 1 like

Related Questions

Description : Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown

Answer : Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown

Answer : Because it has a higher switching frequency and heat tolerance.

Answer : ON state losses of IGBT is less as compared to MOSFET and BJT.

Answer : Yes IGBT is costlier than BJT and MOSFET.

Description : Explain the formation of parasitic BJT and parasitic diode in Power MOSFET. Can parasitic diode be used in same power electronics applications?

Answer : Parasitic Diode: The parasitic diode is in between drain and source. The MOSFET structure itself contains parasitic diode or body drain diode. This parasitic diode allows the reverse flow of current when the ... of MOSFET as a BJT collector. Parasitic BJT operates in the cut-off region.

Next Page →Ask a QuestionShow More