search
person

1 Answer

Yes IGBT is costlier than BJT and MOSFET.
thumb_up_alt 0 like thumb_down_alt 0 dislike

Related questions

Description : Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown

Answer : Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown

Description : Compare BJT, MOSFET and IGBT .

Answer : BJT MOSFET IGBT BJT is a current controlled device. MOSFET is a voltage controlled device. IGBT is a voltage controlled device. The input impedance of BJT is low. ... is minority carrier device. MOSFET is majority carrier device. IGBT is minority carrier device.

Description :

Answer : Because it has a higher switching frequency and heat tolerance.

Description :

Answer : ON state losses of IGBT is less as compared to MOSFET and BJT.

Description : Is the input impedance of MOSFET more than BJT and FET?

Answer : Yes, the input impedance of MOSFET more than BJT and FET.

Description : Operating frequency of power MOSFET is higher than that of power BJT. Justify the statement.

Answer : Power MOSFET have high turning on and turning off capability high switching speed of MOSFET is due to the high rate of change of drain voltage. The switching losses of power MOSFET ... lower frequency. Hence, operating frequency of power MOSFET is higher than that of power BJT.

Description : Explain the formation of parasitic BJT and parasitic diode in Power MOSFET. Can parasitic diode be used in same power electronics applications?

Answer : Parasitic Diode: The parasitic diode is in between drain and source. The MOSFET structure itself contains parasitic diode or body drain diode. This parasitic diode allows the reverse flow of current when the ... of MOSFET as a BJT collector. Parasitic BJT operates in the cut-off region.

Description : An FET is a better chopper than a BJT because it has (A) lower offset voltage (B) higher series ON resistance (C) lower input current (D) higher input impedance

Answer : An FET is a better chopper than a BJT because it has lower offset voltage

Description : Describe with neat sketch the constructional details of IGBT.

Answer : Construction: Insulated gate bipolar transistor or IGBT, is a solid state devices primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast ... layer and p+ emitter constitute a BJT with a wide base region and hence small current gain.

Description : Draw construction of IGBT.

Answer : construction of IGBT

Description : Give the applications of IGBT

Answer : 1) AC and DC motor drives 2) SMPS 3) Inverters 4) Choppers 5) Solid-state Relays 6) solid-state Contactors

Description : The number of terminals present in IGBT is A) 2 B) 3 C) 4 D) 5

Answer : The number of terminals present in IGBT is 3

Description : Justify the statements. 1. IGBT uses a vertically oriented structure. 2. IGBT is preferred as a power switch over both power BJT and MOSFET. 3. Punch through IGBT structure are more popular and are widely used.

Answer : 1. IGBT uses vertically oriented structure. IGBT use vertically oriented structure to reduce the resistance and to increase the current flow area. Hence IGBT uses vertically oriented ... DC circuit applications. Hence punch through IGBT structure are more popular and are widely used.

Description : Also, highlight the problem faced during parallel operation.

Answer : Parallel operation of IGBT: Parallel operation of IGBT is done for obtaining high current rating. Paralleling of IGBT reduces conduction losses and thermal stress. IGBT combines the qualities of ... . IGBTs must share losses equally otherwise IGBT may get failure due to thermal differences.

Description :

Answer : No, IGBT is not the current controlled device. IGBT is a voltage controlled device. IGBT have combine qualities of MOSFET and BJT. The high switching speed of MOSFET and low conduction losses of BJT. Also, IGBT which stands for Insulated Gate Bipolar Transistor have high input impedance.

Description :

Answer : IGBT is a bipolar device.

Description :

Answer :  IGBT or Insulated Gate Bi-polar Transistors are typically semiconductor devices aka.  controlled switches,  which find their applications in Power Electronics circuits such as Inverters, and electrical ... ( buy implementing suitable Pulse Width Modulation scheme ) * Lower cost 

Description :

Answer : IGBT is a bipolar device because current is carried by both holes and electrons.

Description : What is a BJT?

Answer : Bipolar Junction Transistor (BJT): BJT is a Bipolar device. (Uses both electrons and holes charge carrier for current conduction) Two Junctions (Emitter junction & collector ... mode (Current amplification) Cutoff mode (Open switch) Saturation mode (Close switch)

Description :

Answer : Yes BJT have internal capacitances.

Description :

Answer : BJT act as switch in saturation and  cutoff region ( ON state in saturation region and OFF state in cut-off region )

Description :

Answer : In cut-off region of BJT both the emitter-base junction and collector-base junction are reverse biased.

Description :

Answer : Active region of BJT act as amplifier.

Description :

Answer : Active , Saturation , Cut-off region of operations in BJT.

Description :

Answer : Yes BJT have second breakdown problem.

Description :

Answer : BJT is current controlled device.

Description :

Answer : BJT have three terminals Base, emitter and collector.

Description :

Answer : In  BJT  there  is  movement  of   electrons  and  holes   accros  the  junctions  which  is  basicaly  current  flow.

Description :

Answer : When Q-point is at cut off region means it is just above the horizontal axis VCE

Description :

Answer : The proper flow of zero signal collector current and the maintenance of the proper collector emmiter voltage during passage of single called as transistor biasing

Description :

Answer : Beta is the current gain which is the ratio of collector current to base current.

Description :

Answer : BJT control the flow of electron so it is a active device.

Description :

Answer : No, BJT is a current controlled device .

Description :

Answer : Bipolar junction transistor

Description :

Answer : Transformer coupled amplifiers Direct coupled amplifiers Multistage amplifiers Darlington amplifiers Emmiter follower

Description :

Answer : Bjt transistor is a type of transistor which  uses both electrons and hole charge carrier.bjts are used as switches and amplifiers.They amplify currents.

Description :

Answer : No MOSFET do not have a second breakdown problem.

Description :

Answer : MOSFET  are voltage controlled devices.

Description :

Answer : MOSFETs are of two types namely  1) enhancement type MOSFET  or  E-MOSFET 2) depletion type MOSFET  or  D-MOSFET

Description :

Answer : MOSFET have high current losses due to High on state resistance. Hence MOSFET is used for low power applications.

Description :

Answer : Because of positive temperature coefficient of mosfet the paralleling of mosfet is easier.

Description :

Answer : Yes MOSFET can operate at very high frequency.

Description : what are the uses of MOSFET ?

Answer : Choppers and inverters and where high switching frequency is required.

Description : what is MOSFET ?

Answer : MOSFET is a type of Field Effect Transistor (FET). It is a voltage controlled transistor. MOSFET have very high input impedance. It can be use with very low current circuits. It is very fast ... of Nano ampere. There are two types of MOSFET one is enhancement mode and second is depletion mode.

Description : Compare between BJT and FET on the basis of (i) Biolar/Unipolar (ii) Tharmal Runaway (iii) Noise (iv) Applications

Answer : Parameter BJT FET Bipolar/Unipolar It is bipolar device i.e. current in this device is carried by electrons and holes. It is unipolar device i.e. current ... in oscilloscopes, electronic voltmeters and other measuring and testing equipment because of their high input impedance.

Description :  If the base current of a BJT is 250 µA and emitter current is 15 mA, then the common base current gain will be A) 0.98 B) 0.41 C) 59 D) 55  

Answer :  If the base current of a BJT is 250 µA and emitter current is 15 mA, then the common base current gain will be 0.98 

Description : What is the difference between BJT and FET?

Answer : BJT  is  a  current  opperated   transistor  while  FET   is  a  field   opperated  transistor.

Description : What is the difference between beta and forced beta for BJT?

Description : State 2 advantages of JFET over BJT.

Answer : Advantages of JFET over BJT: 1) High input impedance 2) Better thermal stability 3) Produce less noise 4) Smaller than BJT 5) Rugged in construction and simpler to fabricate 6) High degree of isolation between Input and Output. 

Description : List specification of BJT.

Answer : * The bipolar junction transistor (BJT) has small signal current gain, α (hfb). * Maximum collector current Ic (max). * Maximum collector to emitter voltage, VCE (max). * Collector to emitter ... . * Collector to emitter cut off voltage, VCEO. * Base emitter saturation voltage, VBE (sat).

← Prev Question Next Question →
editAsk a Question
...