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Yes BJT have internal capacitances.
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Answer : Yes BJT have second breakdown problem.

Answer : Bipolar junction transistor

Answer : BJT have three terminals Base, emitter and collector.

Description : An FET is a better chopper than a BJT because it has (A) lower offset voltage (B) higher series ON resistance (C) lower input current (D) higher input impedance

Answer : An FET is a better chopper than a BJT because it has lower offset voltage

Description : What is a BJT?

Answer : Bipolar Junction Transistor (BJT): BJT is a Bipolar device. (Uses both electrons and holes charge carrier for current conduction) Two Junctions (Emitter junction & collector ... mode (Current amplification) Cutoff mode (Open switch) Saturation mode (Close switch)

Answer : Yes IGBT is costlier than BJT and MOSFET.

Answer : BJT act as switch in saturation and  cutoff region ( ON state in saturation region and OFF state in cut-off region )

Answer : In cut-off region of BJT both the emitter-base junction and collector-base junction are reverse biased.

Answer : Active region of BJT act as amplifier.

Answer : Active , Saturation , Cut-off region of operations in BJT.

Answer : BJT is current controlled device.

Answer : In  BJT  there  is  movement  of   electrons  and  holes   accros  the  junctions  which  is  basicaly  current  flow.

Answer : When Q-point is at cut off region means it is just above the horizontal axis VCE

Answer : The proper flow of zero signal collector current and the maintenance of the proper collector emmiter voltage during passage of single called as transistor biasing

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Answer : BJT control the flow of electron so it is a active device.

Answer : No, BJT is a current controlled device .

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Answer : Bjt transistor is a type of transistor which  uses both electrons and hole charge carrier.bjts are used as switches and amplifiers.They amplify currents.

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Answer : a) E.M.F : The electromotive force of a battery is defined as the energy spent or the work done in taking a unit positive charge around the complete circuit of the battery i.e., in ... input required to restore the initial state of charge, under specified conditions, is called Watt-hr efficiency.

Description : What is internal voltage drop and terminal voltage?

Answer : It is not permissible to just connect the positive terminal to the negative terminal of a cell with a copper wire. It will overheat and get damaged. This happens because the electromotive force (emf) ... than the nominal voltage (emf) of the cell and this lower voltage is called terminal voltage.

Description : The internal resistances of an ideal current source, and an ideal voltage source are, respectively, (A) 0, ∞ (B) ∞, ∞ (C) ∞, 0 (D) 0,0

Answer : The internal resistances of an ideal current source, and an ideal voltage source are, respectively, ∞, 0

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Answer : The internal design of 4x3 ROM

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Answer : For maximum transfer of power, internal resistance of the source should be equal to load resistance.

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Answer : Calculate the value of equivalent capacitance of the combination

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Description : Explain estimation of channel capacitance of CMOS.

Answer : Capacitance estimation: The dynamic response i.e. switching speed of MOS system depends on capacitance associated with the MOS devices which are formed by different layers in MOS transistors ... are due to three dimensional, distributed charge voltage relations within the device structure. 

Description : What is capacitance?

Answer : Capacitance is the capacity of element to store electric charge in it. The unit of capacitance is Farad. 

Description : Energy stored in electrostatic field of capacitance formula

Answer : Energy stored in electrostatic field of capacitance formula

Description : Capacitance

Answer : Capacitance formula

Description : A diode in which the change in reverse bias voltage varies the capacitance is called as A) Varactor diode B) Switching diode C) Tunnel diode D) Zener-diode  

Answer : A diode in which the change in reverse bias voltage varies the capacitance is called as Varactor diode

Description : Capacitance is the ability of a body to store an__________.  (A) electrical charge (B) electric current (C) voltage (D) All of the above

Answer : Capacitance is the ability of a body to store an electrical charge 

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Answer : For 11 kV line the capacitance per km per phase will be of the order of: 0.01 Farad

Description : What is the capacitance when a capacitor passes a current of 31.43 mA when supplied with 40 V AC with a frequency of 1000 Hz? A) 0.125 F B) 0.125 μF C) 1257.2 μF D) None of these

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Description : The time constant of the capacitance circuit is defined as the time during which voltage?

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Answer : Shunt capacitance is neglected while considering short transmission line.

Description : What is the reciprocal of capacitance?

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Description : State 2 advantages of JFET over BJT.

Answer : Advantages of JFET over BJT: 1) High input impedance 2) Better thermal stability 3) Produce less noise 4) Smaller than BJT 5) Rugged in construction and simpler to fabricate 6) High degree of isolation between Input and Output. 

Description : List specification of BJT.

Answer : * The bipolar junction transistor (BJT) has small signal current gain, α (hfb). * Maximum collector current Ic (max). * Maximum collector to emitter voltage, VCE (max). * Collector to emitter ... . * Collector to emitter cut off voltage, VCEO. * Base emitter saturation voltage, VBE (sat).

Description : State reason BJT is called as bipolar junction transistor.

Answer : BJT is called bipolar junction transistor because in BJT current conduction takes place due to majority as well as minority charge carriers.

Description : List configurations of BJT. 

Answer : Configurations of BJT : 1) Common Base (CB) configuration 2) Common Emitter (CE) configuration 3) Common Collector (CC) configuration

Description : State the need of biasing of BJT.

Answer : Need of biasing: The basic need of transistor biasing is to keep the base-emitter (B-E) junction properly forward biased and the collector-emitter (C-E) junction properly reverse biased ... transistor biasing is necessary for normal and proper operation of transistor to be used for amplification. 

Description : Draw circuit diagram of voltage divider biasing list two advantages of voltage divider biasing of BJT.

Answer : Two advantages of voltage divider biasing of BJT. 1. It is very simple method of transistor biasing. 2. The biasing conditions can be very easily set. 3. there is no loading of ... 5. The resistor RE introduces a negative feedback. So all the advantages of negative feedback are obtained. 

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