Does MOSFET have a second breakdown problem?

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asked Sep 23, 2017 by anonymous

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Last answer: Yes BJT have second breakdown problem.

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asked Sep 20, 2017 by anonymous

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asked Jun 18, 2018 by anonymous

When does the Body bias effect occur in an n-channel MOSFET?

When does the Body bias effect occur in an n-channel MOSFET? A) When the Source voltage is less the Bulk voltage B) When the Source voltage is equal to or greater the Bulk voltage C) When the Drain voltage is equal to the Bulk voltage D) When the Gate voltage is equal to the Bulk Voltage

Last answer: When does the Body bias effect occur in an n-channel MOSFET? A) When the Source voltage is less the Bulk voltage B) When the Source voltage is equal to or greater the Bulk voltage C) ... voltage is equal to the Bulk voltage D) When the Gate voltage is equal to the Bulk Voltage

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asked Sep 29, 2017 by anonymous

is IGBT costlier than BJT and MOSFET?

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asked Sep 23, 2017 by anonymous

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Last answer: MOSFET are voltage controlled devices.

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asked Sep 22, 2017 by anonymous

What are the two types of mosfet?

Last answer: MOSFETs are of two types namely 1) enhancement type MOSFET or E-MOSFET 2) depletion type MOSFET or D-MOSFET

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asked Sep 22, 2017 by anonymous

Why MOSFET is used for low power applications?

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asked Sep 22, 2017 by anonymous

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asked Sep 22, 2017 by anonymous

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Last answer: Yes MOSFET can operate at very high frequency.

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asked Aug 13, 2017 by Zeeshan

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asked Aug 6, 2017 by anonymous

what is MOSFET ?

Last answer: MOSFET is a type of Field Effect Transistor (FET). It is a voltage controlled transistor. MOSFET have very high input impedance. It can be use with very low current circuits. It is very fast ... of Nano ampere. There are two types of MOSFET one is enhancement mode and second is depletion mode.

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asked Aug 12, 2019 by aku

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asked Aug 3, 2019 by anonymous

What parameters are to be considered when choosing a MOSFET?

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asked Jun 18, 2018 by anonymous

A certain power MOSFET has a maximum junction temperature specification of 1500o C, a junction-to-case

A certain power MOSFET has a maximum junction temperature specification of 1500o C, a junction-to-case thermal resistance of 1.00 C/W, and a junction-to ambient thermal resistance of 600 C/W. If the ambient temperature is 300o C, then the maximum allowable power dissipation in the device will be A) 1.52 W B) 1.72 W C) 1.92W D) 2.00 W

Last answer: A certain power MOSFET has a maximum junction temperature specification of 1500o C, a junction-to-case thermal resistance of 1.00 C/W, and a junction-to ambient thermal resistance of ... 300o C, then the maximum allowable power dissipation in the device will be 2.00 W

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asked Mar 19, 2018 by anonymous

A MOSFET has how many terminals?

Last answer: A MOSFET having three terminals 1st one is Gate (insulated), 2nd one is Source and 3rd one is Drain.

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asked Mar 19, 2018 by anonymous

What is the transconductance of a MOSFET?

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How can we check a Mosfet?

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asked Mar 19, 2018 by anonymous

What is the use of a Mosfet?

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asked Sep 15, 2017 by anonymous

why IGBT is preferred as a power switch over both power BJT and MOSFET?

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asked May 2, 2020 by anonymous

State advantages of MOSFET.

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asked Jul 25, 2019 by anonymous

Describe with neat sketch the construction and working principle of MOSFET.

Last answer: Construction and working principle of MOSFET: A) Depletion type MOSFET: Construction: The N-channel depletion type MOSFET is formed on P-type silicon substrate with two heavily ... accumulation of electrons and hence more current. Thus the MOSFET is a gate voltage controlled device.

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asked Jul 25, 2019 by anonymous

State the applications of MOSFET

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asked Sep 5, 2018 by anonymous

Compare JFET with MOSFET.

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asked Sep 5, 2018 by anonymous

Describe the operation of N channel enhancement type MOSFET with diagram.

Last answer: As its name indicates, this MOSFET operates only in the enhancement mode and has no depletion mode. It operates with large positive gate voltage only. It does not conduct when the ... of charge carriers attracted to the positive gate. Thus drain current is controlled by the gate potential.

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asked Apr 28, 2018 by anonymous

The threshold voltage of an n- channel enhancement mode MOSFET is 0.5V when the device is biased at

The threshold voltage of an n- channel enhancement mode MOSFET is 0.5V when the device is biased at a gate voltage of 3V. Pinch off would be occurs at a drain voltage of (A) 1.5V (B) 2.5V (C) 3.5V (D) 4.5V

Last answer: The threshold voltage of an n- channel enhancement mode MOSFET is 0.5V when the device is biased at a gate voltage of 3V. Pinch off would be occurs at a drain voltage of 2.5V

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asked Apr 28, 2018 by anonymous

Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ?

Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown

Last answer: Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown

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asked Mar 19, 2018 by anonymous

What is meant by pinch off voltage in MOSFET?

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asked Mar 19, 2018 by anonymous

What is channel length modulation in MOSFET?

Last answer: Shortening of lenght of the inverted channel region with increase in drain bias for large drain biases due to which current increases with drain bias and output resistance decreases is called channel length modulation in MOSFET.

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asked Mar 19, 2018 by anonymous

What is meant by body effect in MOSFET?

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asked Mar 19, 2018 by anonymous

Why Mosfet is called Mosfet?

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asked Mar 19, 2018 by anonymous

What is the work of MOSFET?

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asked Mar 19, 2018 by anonymous

In MOSFET, the polarity of the inversion layers is the same as that of?

Last answer: In MOSFET, the polarity of the inversion layers is the same as that of majority carriers in the source.

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asked Mar 19, 2018 by anonymous

MOSFET uses the electric field of?

Last answer: MOSFET uses the electric field of gate capacitance.

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asked Mar 19, 2018 by anonymous

Is the input impedance of MOSFET more than BJT and FET?

Last answer: Yes, the input impedance of MOSFET more than BJT and FET.

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294 views 1 answer

asked Mar 10, 2018 by anonymous

Explain switching model of MOSFET.

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asked Feb 19, 2018 by anonymous

Explain MOSFET gate drive circuit and totem pole configuration.

Last answer: MOSFET gate drive circuit: The turning on and turning off of MOSFET can be controlled from gate to source voltage signal. If the gate to source voltage of MOSFET exceeds threshold ... this configuration, the two switches (transistors) are used in totem pole arrangement with a comparator.

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269 views 1 answer

asked Feb 6, 2018 by anonymous

Explain the formation of parasitic BJT and parasitic diode in Power MOSFET.

Explain the formation of parasitic BJT and parasitic diode in Power MOSFET. Can parasitic diode be used in same power electronics applications?

Last answer: Parasitic Diode: The parasitic diode is in between drain and source. The MOSFET structure itself contains parasitic diode or body drain diode. This parasitic diode allows the reverse flow of current when the ... of MOSFET as a BJT collector. Parasitic BJT operates in the cut-off region.

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asked Feb 3, 2018 by anonymous

Operating frequency of power MOSFET is higher than that of power BJT. Justify the statement.

Last answer: Power MOSFET have high turning on and turning off capability high switching speed of MOSFET is due to the high rate of change of drain voltage. The switching losses of power MOSFET ... lower frequency. Hence, operating frequency of power MOSFET is higher than that of power BJT.

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asked Feb 2, 2018 by anonymous

Justify the statement. Antiparallel diode is connected across MOSFET.

Last answer: In MOSFET current is flow from drain to source but when the load is inductive the current may flow in opposite direction. To avoid the opposite flow of current and to protect MOSFET the antiparallel diode is connected across MOSFET.

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127 views 1 answer

asked Dec 7, 2017 by anonymous

parallel operation of mosfet can be done more easily as compared to thyristor. why?

parallel operation of MOSFET can be done more easily as compared to thyristor. why?

Last answer: Parallel operation of MOSFET can be done more easily as compared to thyristor because the resistance of MOSFET is increases with increase in temperature. MOSFET have the positive temperature coefficient. In ... the parallel operation of MOSFET can be done more easily as compared to the thyristor.

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263 views 1 answer

asked Dec 7, 2017 by anonymous

Justify. Power MOSFET is operated at high enough gate source voltage to minimize the conduction losses.

Last answer: MOSFET is metal oxide field effect transistor. MOSFET is a voltage controlled device. MOSFET is majority carrier device. MOSFET are of two one is n-channel MOSFET and p-channel MOSFET. Gate, ... . Hence, power MOSFET is operated at high enough gate-source voltage to minimize the conduction losses.

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asked Nov 14, 2017 by anonymous

Explain difference between enhancement MOSFET and depletion type MOSFET.

Last answer: In enhancement MOSFET channel is not initially exists but in depletion MOSFET channel is already exists. In case of depletion MOSFET if the voltage is applied between drain and source the drain current will flow ... a channel. depletion MOSFET & enhancement MOSFET

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346 views 1 answer

asked Nov 10, 2017 by anonymous

Compare BJT, MOSFET and IGBT .

Last answer: BJT MOSFET IGBT BJT is a current controlled device. MOSFET is a voltage controlled device. IGBT is a voltage controlled device. The input impedance of BJT is low. ... is minority carrier device. MOSFET is majority carrier device. IGBT is minority carrier device.

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352 views 1 answer

anonymous · Answer 1 · 2017-09-23T12:04:47+0000

answered Sep 23, 2017 by anonymous

No MOSFET do not have a second breakdown problem.

Does MOSFET have a second breakdown problem?

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