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Yes MOSFET can operate at very high frequency.
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Answer :

MOSFET provides better efficiency at high frequency and its high speed switching losses are less hence MOSFET is used for high frequency.

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Description :

Operating frequency of power MOSFET is higher than that of power BJT. Justify the statement.

Answer :

Power MOSFET have high turning on and turning off capability high switching speed of MOSFET is due to the high rate of change of drain voltage. The switching losses of power MOSFET ... lower frequency. Hence, operating frequency of power MOSFET is higher than that of power BJT.

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Description :

Justify. Power MOSFET is operated at high enough gate source voltage to minimize the conduction losses. 

Answer :

MOSFET is metal oxide field effect transistor. MOSFET is a voltage controlled device. MOSFET is majority carrier device. MOSFET are of two one is n-channel MOSFET and p-channel MOSFET. Gate, ... . Hence, power MOSFET is operated at high enough gate-source voltage to minimize the conduction losses.

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Description :

Which capacitor is used for high frequency?

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Description :

Which of the following thyristors can be used for high frequency of operation? A) TRIAC B) DIAC C) SCR D) GTO 

Answer :

Which of the following thyristors can be used for high frequency of operation? A) TRIAC B) DIAC C) SCR D) GTO 

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86 views 1 answer
Description :

In a series RLC high Q circuit, the current peaks at a frequency  (1) equal to the resonant frequency (2) greater than the resonant frequency (3) less than the resonant frequency (4) equal to half the resonant frequency

Answer :

In a series RLC high Q circuit, the current peaks at a frequency equal to the resonant frequency

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308 views 1 answer
Description :

Answer :

For measuring current at high frequency we should use thermocouple instrument.

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101 views 1 answer
Description :

In a 741 Op-Amp, there is 20 dB/decade fall-off starting at a relatively low frequency. This is due to the (A) applied load (B) internal compensation (C) impedance of the source (D) power dissipation in the chip

Answer :

In a 741 Op-Amp, there is 20 dB/decade fall-off starting at a relatively low frequency. This is due to the internal compensation

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109 views 1 answer
Description :

Answer :

Yes IGBT is costlier than BJT and MOSFET.

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2.6k views 1 answer
Description :

Answer :

No MOSFET do not have a second breakdown problem.

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78 views 1 answer
Description :

Answer :

MOSFET  are voltage controlled devices.

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119 views 3 answers
Description :

Answer :

MOSFETs are of two types namely  1) enhancement type MOSFET  or  E-MOSFET 2) depletion type MOSFET  or  D-MOSFET

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Description :

Answer :

MOSFET have high current losses due to High on state resistance. Hence MOSFET is used for low power applications.

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84 views 1 answer
Description :

Answer :

Because of positive temperature coefficient of mosfet the paralleling of mosfet is easier.

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60 views 1 answer
Description :

what are the uses of MOSFET ?

Answer :

Choppers and inverters and where high switching frequency is required.

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86 views 1 answer
Description :

what is MOSFET ?

Answer :

MOSFET is a type of Field Effect Transistor (FET). It is a voltage controlled transistor. MOSFET have very high input impedance. It can be use with very low current circuits. It is very fast ... of Nano ampere. There are two types of MOSFET one is enhancement mode and second is depletion mode.

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90 views 1 answer
Description :

How can we check a Mosfet?

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Description :

parallel operation of MOSFET can be done more easily as compared to thyristor. why?

Answer :

Parallel operation of MOSFET can be done more easily as compared to thyristor because the resistance of MOSFET is increases with increase in temperature. MOSFET have the positive temperature coefficient. In ... the parallel operation of MOSFET can be done more easily as compared to the thyristor.

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269 views 1 answer
Description :

The threshold voltage of an n- channel enhancement mode MOSFET is 0.5V when the device is biased at a gate voltage of 3V. Pinch off would be occurs at a drain voltage of (A) 1.5V (B) 2.5V (C) 3.5V (D) 4.5V

Answer :

The threshold voltage of an n- channel enhancement mode MOSFET is 0.5V when the device is biased at a gate voltage of 3V. Pinch off would be occurs at a drain voltage of 2.5V

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132 views 1 answer
Description :

What is the frequency range of VHF electromagnetic waves? A) 30-300 kHz B) 30-3000 kHz C) 30-300 MHz D) 30-3000 MHz

Answer :

What is the frequency range of VHF electromagnetic waves? A) 30-300 kHz B) 30-3000 kHz C) 30-300 MHz D) 30-3000 MHz

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Description :

A 4 GHz carrier is amplitude modulated by a low-pass signal of maximum cut off frequency 1 MHz. lf this signal is to be ideally sampled, the minimum sampling frequency should be nearly

Answer :

A 4 GHz carrier is amplitude modulated by a low-pass signal of maximum cut off frequency 1 MHz. lf this signal is to be ideally sampled, the minimum sampling frequency should be nearly 4 Ghz

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Description :

An accelerometer has input range of 0 to 10g, natural frequency 30 Hz and mass 0.001 kg. The range of the secondary displacement transducer in mm required to cover the input range is (A) 0 to 2.76 (B) 0 to 9.81 (C) 0 to 11.20 (D) 0 to 52.10

Answer :

An accelerometer has input range of 0 to 10g, natural frequency 30 Hz and mass 0.001 kg. The range of the secondary displacement transducer in mm required to cover the input range is 0 to 2.76

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59 views 1 answer
Description :

In R-L-C series resonant circuit magnitude of resonance frequency can be changed by changing the value of?

Answer :

In R-L-C series resonant circuit magnitude of resonance frequency can be changed by changing the value of L or C.

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Description :

 A pulse radar has a pulse repetition frequency (PRF) of 3 KHz. If the radar is emitting at 10 GHz, what is the maximum unambiguous range for this radar? A) 5 Km B) 5 m C) 50 Km D) 15 m 

Answer :

 A pulse radar has a pulse repetition frequency (PRF) of 3 KHz. If the radar is emitting at 10 GHz, what is the maximum unambiguous range for this radar? A) 5 Km B) 5 m C) 50 Km D) 15 m 

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Description :

Two waves have frequency of 500 Hz. One is set at its maximum value whereas the other at zero. The phase angle between them will be

Answer :

Two waves have frequency of 500 Hz. One is set at its maximum value whereas the other at zero. The phase angle between them will be 90o

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Description :

In a series L-C circuit at the resonant frequency the?

Answer :

In a series L-C circuit at the resonant frequency the current is maximum.

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118 views 1 answer
Description :

State advantages of MOSFET.

Answer :

Advantages of MOSFET * MOSFETs provide greater efficiency while operating at lower voltages. * Absence of gate current results in high input impedance. * High switching speed. * They operate at lower ... due to lower resistance of channel. * They are easy to manufacture. * They are portable.

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Description :

What parameters are to be considered when choosing a MOSFET?

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Description :

Describe with neat sketch the construction and working principle of MOSFET.

Answer :

Construction and working principle of MOSFET:  A) Depletion type MOSFET: Construction: The N-channel depletion type MOSFET is formed on P-type silicon substrate with two heavily ... accumulation of electrons and hence more current. Thus the MOSFET is a gate voltage controlled device.

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Description :

State the applications of MOSFET

Answer :

Applications of MOSFET: i) Switching-mode-power-supplies (SMPS) and linear power supplies. ii) Brushless DC motor drives iii) Solid state DC relay iv) Automobile applications v) Stepper motor controller vi) Lighting controls vii) Solenoid drivers viii) Robotics ix) Induction heating

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58 views 1 answer
Description :

Compare JFET with MOSFET.

Answer :

Particulars JFET MOSFET 1) Type Voltage controlled device Voltage controlled device 2) Mode of operation Operates only in depletion mode Operates in depletion and enhancement ... 6) Gate connection Not isolated from substrate Isolated by SiO2 layer from substrate

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75 views 1 answer
Description :

Describe the operation of N channel enhancement type MOSFET with diagram.

Answer :

As its name indicates, this MOSFET operates only in the enhancement mode and has no depletion mode. It operates with large positive gate voltage only. It does not conduct when the ... of charge carriers attracted to the positive gate. Thus drain current is controlled by the gate potential.

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225 views 1 answer
Description :

A certain power MOSFET has a maximum junction temperature specification of 1500o C, a junction-to-case thermal resistance of 1.00 C/W, and a junction-to ambient thermal resistance of 600 C/W. If the ambient temperature is 300o C, then the maximum allowable power dissipation in the device will be A) 1.52 W B) 1.72 W C) 1.92W D) 2.00 W

Answer :

A certain power MOSFET has a maximum junction temperature specification of 1500o C, a junction-to-case thermal resistance of 1.00 C/W, and a junction-to ambient thermal resistance of  ... 300o C, then the maximum allowable power dissipation in the device will be 2.00 W 

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124 views 1 answer
Description :

When does the Body bias effect occur in an n-channel MOSFET?  A) When the Source voltage is less the Bulk voltage B) When the Source voltage is equal to or greater the Bulk voltage C) When the Drain voltage is equal to the Bulk voltage D) When the Gate voltage is equal to the Bulk Voltage 

Answer :

When does the Body bias effect occur in an n-channel MOSFET?  A) When the Source voltage is less the Bulk voltage B) When the Source voltage is equal to or greater the Bulk voltage C) ... voltage is equal to the Bulk voltage D) When the Gate voltage is equal to the Bulk Voltage 

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78 views 1 answer
Description :

Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown

Answer :

Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown

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Description :

A MOSFET has how many terminals?

Answer :

A MOSFET having three terminals 1st one is Gate (insulated), 2nd one is Source and 3rd one is Drain.

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180 views 3 answers
Description :

What is the transconductance of a MOSFET?

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Description :

What is meant by pinch off voltage in MOSFET?

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87 views 0 answers
Description :

What is channel length modulation in MOSFET?

Answer :

Shortening of lenght of the inverted channel region with increase in drain bias for large drain biases due to which current increases with drain bias and output resistance decreases is called channel length modulation in MOSFET.

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260 views 2 answers
Description :

What is meant by body effect in MOSFET?

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57 views 0 answers
Description :

What is the use of a Mosfet?

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Description :

Why Mosfet is called Mosfet?

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Description :

What is the work of MOSFET?

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Description :

In MOSFET, the polarity of the inversion layers is the same as that of?

Answer :

In MOSFET, the polarity of the inversion layers is the same as that of majority carriers in the source.

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108 views 1 answer
Description :

MOSFET uses the electric field of?

Answer :

MOSFET uses the electric field of gate capacitance.

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Description :

Is the input impedance of MOSFET more than BJT and FET?

Answer :

Yes, the input impedance of MOSFET more than BJT and FET.

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376 views 1 answer
Description :

Explain switching model of MOSFET.

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Description :

Explain MOSFET gate drive circuit and totem pole configuration.

Answer :

MOSFET gate drive circuit: The turning on and turning off of MOSFET can be controlled from gate to source voltage signal. If the gate to source voltage of MOSFET exceeds threshold ... this configuration, the two switches (transistors) are used in totem pole arrangement with a comparator.

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284 views 1 answer
Description :

Explain the formation of parasitic BJT and parasitic diode in Power MOSFET. Can parasitic diode be used in same power electronics applications?

Answer :

Parasitic Diode: The parasitic diode is in between drain and source. The MOSFET structure itself contains parasitic diode or body drain diode. This parasitic diode allows the reverse flow of current when the ... of MOSFET as a BJT collector. Parasitic BJT operates in the cut-off region.

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