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BJT have three terminals Base, emitter and collector.
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A MOSFET has how many terminals?

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A MOSFET having three terminals 1st one is Gate (insulated), 2nd one is Source and 3rd one is Drain.

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Yes BJT have internal capacitances.

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Yes BJT have second breakdown problem.

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The number of terminals present in IGBT is 3

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If an unsymmetrical line to ground fault occurs at the secondary terminals of a delta/star, ungrounded transformer, then  (A) zero sequence currents are present on both sides of the transformer  (B) zero sequence currents are absent on both sides of the transformer  (C) zero sequence currents are present on the secondary side but not on the primary side  (D) zero sequence currents are present on the primary side but not on the secondary side

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If an unsymmetrical line to ground fault occurs at the secondary terminals of a delta/star, ungrounded transformer, then zero sequence currents are absent on both sides of the transformer 

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A network is said to be under resonance when the voltage and the current at the network input terminals are (A) in phase (B) out of phase (C) in phase quadrature (D) in phase, and have equal magnitudes

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A network is said to be under resonance when the voltage and the current at the network input terminals are in phase

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Service mains are the conductors, which connect the consumer's terminals to the distribution.

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An FET is a better chopper than a BJT because it has (A) lower offset voltage (B) higher series ON resistance (C) lower input current (D) higher input impedance

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An FET is a better chopper than a BJT because it has lower offset voltage

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Description :

What is a BJT?

Answer :

Bipolar Junction Transistor (BJT): BJT is a Bipolar device. (Uses both electrons and holes charge carrier for current conduction) Two Junctions (Emitter junction & collector ... mode (Current amplification) Cutoff mode (Open switch) Saturation mode (Close switch)

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Yes IGBT is costlier than BJT and MOSFET.

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BJT act as switch in saturation and  cutoff region ( ON state in saturation region and OFF state in cut-off region )

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In cut-off region of BJT both the emitter-base junction and collector-base junction are reverse biased.

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Active region of BJT act as amplifier.

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Active , Saturation , Cut-off region of operations in BJT.

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BJT is current controlled device.

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In  BJT  there  is  movement  of   electrons  and  holes   accros  the  junctions  which  is  basicaly  current  flow.

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When Q-point is at cut off region means it is just above the horizontal axis VCE

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The proper flow of zero signal collector current and the maintenance of the proper collector emmiter voltage during passage of single called as transistor biasing

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Beta is the current gain which is the ratio of collector current to base current.

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BJT control the flow of electron so it is a active device.

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No, BJT is a current controlled device .

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Bipolar junction transistor

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Transformer coupled amplifiers Direct coupled amplifiers Multistage amplifiers Darlington amplifiers Emmiter follower

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Bjt transistor is a type of transistor which  uses both electrons and hole charge carrier.bjts are used as switches and amplifiers.They amplify currents.

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How can BJT be used as an amplifier?

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State 2 advantages of JFET over BJT.

Answer :

Advantages of JFET over BJT: 1) High input impedance 2) Better thermal stability 3) Produce less noise 4) Smaller than BJT 5) Rugged in construction and simpler to fabricate 6) High degree of isolation between Input and Output. 

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List specification of BJT.

Answer :

* The bipolar junction transistor (BJT) has small signal current gain, α (hfb). * Maximum collector current Ic (max). * Maximum collector to emitter voltage, VCE (max). * Collector to emitter ... . * Collector to emitter cut off voltage, VCEO. * Base emitter saturation voltage, VBE (sat).

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State reason BJT is called as bipolar junction transistor.

Answer :

BJT is called bipolar junction transistor because in BJT current conduction takes place due to majority as well as minority charge carriers.

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List configurations of BJT. 

Answer :

Configurations of BJT : 1) Common Base (CB) configuration 2) Common Emitter (CE) configuration 3) Common Collector (CC) configuration

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State the need of biasing of BJT.

Answer :

Need of biasing: The basic need of transistor biasing is to keep the base-emitter (B-E) junction properly forward biased and the collector-emitter (C-E) junction properly reverse biased ... transistor biasing is necessary for normal and proper operation of transistor to be used for amplification. 

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Draw circuit diagram of voltage divider biasing list two advantages of voltage divider biasing of BJT.

Answer :

Two advantages of voltage divider biasing of BJT. 1. It is very simple method of transistor biasing. 2. The biasing conditions can be very easily set. 3. there is no loading of ... 5. The resistor RE introduces a negative feedback. So all the advantages of negative feedback are obtained. 

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Compare BJT with FET

Answer :

FET BJT It is unipolar device i.e. current in the device is carried either by electrons or holes It is bipolar device i.e. current in the device is carried either by ... from minority- carrier storage effects & therefore has lower switching speeds & cut-off frequencies. 

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Compare between BJT and FET on the basis of (i) Biolar/Unipolar (ii) Tharmal Runaway (iii) Noise (iv) Applications

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Parameter BJT FET Bipolar/Unipolar It is bipolar device i.e. current in this device is carried by electrons and holes. It is unipolar device i.e. current ... in oscilloscopes, electronic voltmeters and other measuring and testing equipment because of their high input impedance.

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 If the base current of a BJT is 250 µA and emitter current is 15 mA, then the common base current gain will be A) 0.98 B) 0.41 C) 59 D) 55  

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 If the base current of a BJT is 250 µA and emitter current is 15 mA, then the common base current gain will be 0.98 

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Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown

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Which phenomenon is present in thyristors but absent in BJT, MOSFET and IGBT ? (A) forward conduction (B) latching (C) forward blocking (D) reverse breakdown

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What is the difference between BJT and FET?

Answer :

BJT  is  a  current  opperated   transistor  while  FET   is  a  field   opperated  transistor.

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What is a BJT amplifier?

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Is the input impedance of MOSFET more than BJT and FET?

Answer :

Yes, the input impedance of MOSFET more than BJT and FET.

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What is the difference between beta and forced beta for BJT?

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Explain open emitter BJT drive circuit.

Answer :

open emitter BJT drive circuit:

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Explain the formation of parasitic BJT and parasitic diode in Power MOSFET. Can parasitic diode be used in same power electronics applications?

Answer :

Parasitic Diode: The parasitic diode is in between drain and source. The MOSFET structure itself contains parasitic diode or body drain diode. This parasitic diode allows the reverse flow of current when the ... of MOSFET as a BJT collector. Parasitic BJT operates in the cut-off region.

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Operating frequency of power MOSFET is higher than that of power BJT. Justify the statement.

Answer :

Power MOSFET have high turning on and turning off capability high switching speed of MOSFET is due to the high rate of change of drain voltage. The switching losses of power MOSFET ... lower frequency. Hence, operating frequency of power MOSFET is higher than that of power BJT.

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Compare BJT, MOSFET and IGBT .

Answer :

BJT MOSFET IGBT BJT is a current controlled device. MOSFET is a voltage controlled device. IGBT is a voltage controlled device. The input impedance of BJT is low. ... is minority carrier device. MOSFET is majority carrier device. IGBT is minority carrier device.

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What is the value of Beta in power BJT?

Answer :

The beta value in power BJT is 5 to 10.

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Explain the on state losses in power BJT.

Answer :

On state losses in power BJT: Transistor have four types of losses one is turn on state losses second is turn off state losses third is turn on switching losses and fourth is turn ... ON = VCE sat x IC With increasing collector current collector to emitter saturation voltage increases.

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Answer :

Because it has a higher switching frequency and heat tolerance.

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ON state losses of IGBT is less as compared to MOSFET and BJT.

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One day Prakash left home and walked 10 km towards south, turned right and walked 5 km, turned right and walked 10 km and turned left and walked 10 km. How many km will he have to walk to reach his home straight? (A) 30 (B) 10 (C) 20 (D) 15

Answer :

Answer: D

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