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The semiconductor of purest form are called intrinsic semiconductor, (eg. Silicon and germinium) where as semiconductor made up by doping of other semiconductor called extrinsic semiconductor.(again extrinsic semiconductor classified as N type n P type semiconductor) 

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Description : n-type semiconductor can be made by adding ____ to intrinsic semiconductor (A) Boron (B) Arsenic (C) Carbon (D) Germanium

Answer : n-type semiconductor can be made by adding Arsenic to intrinsic semiconductor

Description : Intrinsic semiconductor material is characterized by a valence shell of how many electrons? a) 1 b) 2 c) 4 d) 6

Answer : Intrinsic semiconductor material is characterized by a valence shell of 4 electrons.

Description : State the impurities for obtaining p-type and n-type semiconductor from intrinsic semi conductor. 

Answer : Crystals of Silicon and Germanium are doped using two types of dopants:  1. The impurities for obtaining n-type semiconductor from intrinsic semiconductor are pentavalent impurity; like Arsenic (As), Antimony ... semiconductor are trivalent impurity; like Indium (In), Boron (B), Aluminum (Al), etc.

Description : Compare intrinsic and extrinsic semiconductor

Answer : Intrinsic semiconductor Extrinsic Semiconductor Pure form of semiconductor Impure form of semiconductor No. electrons and holes are equal  No. of electrons and holes are not equal Electrical ... e.g. Ge, Si semiconductor e.g. p-type or n-type semiconductor

Description : Why is an intrinsic semiconductor doped?

Answer : Intrinsic semiconductor is doped in order to increase conductivity of semiconductor. Doping increases majority charge carries either electrons or holes and majority charge carriers responsible for electric current. 

Description : Define (i) Intrinsic semiconductor (ii)Fermi energy level  

Answer : (i) Intrinsic semiconductor: The semiconductor in extremely pure form is called as intrinsic semiconductor.  (ii) Fermi energy level : The energy difference between conduction band and valence band is called as fermi energy level.

Description : When Arsenic atoms are added to Germanium lattice, it becomes a/an (1) Insulator (2) Superconductor (3) Intrinsic semiconductor (4) Extrinsic semiconductor

Answer : Extrinsic semiconductor

Description : Define intrinsic and extrinsic semiconductor. 

Answer : Intrinsic – Semiconductor in pure form is called as intrinsic semiconductor. Extrinsic – Semiconductor with added impurity is called as extrinsic semiconductor.

Description : In a single crystal of an intrinsic semiconductor, the number of free carriers at the Fermi level at room temperature is: A) Half the total number of electrons in the crystal B) Zero C) Half the number of atoms in the crystal D) Half the number of free electrons in the crystal

Answer : In a single crystal of an intrinsic semiconductor, the number of free carriers at the Fermi level at room temperature is: Zero 

Description : In an intrinsic semiconductor the Fermi level is (a) closer to valence band. (b) closer to conduction band. (c) within the balance band. (d) midway between the valence and conduction bands. 

Description : At absolute zero temperature, an intrinsic semiconductor behaves as (a) a good conductor (b) a super conductor (c) an insulator (d) variable resistor

Description : At very high temperatures, extrinsic semiconductor becomes intrinsic semiconductor because (A) Of drive in diffusion of dopants & carriers. (B) Band to band transition dominates impurity ionization. (C) ... band to band transition. (D) Band to band transition is balanced by impurity ionisation.

Answer : At very high temperatures, extrinsic semiconductor becomes intrinsic semiconductor because Impurity ionization dominates band to band transition.

Answer : At absolute temperature, an intrinsic semiconductor has No holes or free electrons.

Answer : At room temperature, an intrinsic semiconductor has A few free electrons and holes.

Answer :  In an intrinsic semiconductor, the number of free electrons Equals the number of holes.

Answer : At room temperature, the current in an intrinsic semiconductor is due to holes and electrons.

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